Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers

N. C. Gerhardt, M. R. Hofmann, J. Hader, J. V. Moloney, S. W. Koch, H. Riechert

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Measurements and microscopic calculations of the α-factor in (GaIn)(NAs) quantum well lasers were discussed. Data was obtained from the shift of the Fabry-Perot modes with injection current was used to eliminate temperature-dependent artifacts. The molecular beam epitaxy was grown 350 μm long ridge-waveguide laser structure for the experiment. It was found that the value of α at the laser emission wavelength in this structure is around 2.5 +/-0.4 and remains constant with carrier density variations for a fixed emission wavelength.

Original languageEnglish (US)
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number1
DOIs
StatePublished - Jan 5 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers'. Together they form a unique fingerprint.

  • Cite this