Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers

N. C. Gerhardt, M. R. Hofmann, Jorg Hader, Jerome V Moloney, Stephan W Koch, H. Riechert

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Measurements and microscopic calculations of the α-factor in (GaIn)(NAs) quantum well lasers were discussed. Data was obtained from the shift of the Fabry-Perot modes with injection current was used to eliminate temperature-dependent artifacts. The molecular beam epitaxy was grown 350 μm long ridge-waveguide laser structure for the experiment. It was found that the value of α at the laser emission wavelength in this structure is around 2.5 +/-0.4 and remains constant with carrier density variations for a fixed emission wavelength.

Original languageEnglish (US)
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number1
DOIs
StatePublished - Jan 5 2004

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augmentation
waveguide lasers
quantum well lasers
wavelengths
lasers
artifacts
ridges
molecular beam epitaxy
injection
shift
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers. / Gerhardt, N. C.; Hofmann, M. R.; Hader, Jorg; Moloney, Jerome V; Koch, Stephan W; Riechert, H.

In: Applied Physics Letters, Vol. 84, No. 1, 05.01.2004, p. 1-3.

Research output: Contribution to journalArticle

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AU - Riechert, H.

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