Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers

C. Schlichenmaier, S. W. Koch, W. W. Chow

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The antiguiding or linewidth enhancement factor α is computed microscopically for a series of type-II GaAsSb/GaInAs/GaAs quantum-well structures. The results predict α values below unity at peak gain suggesting highly stable laser operation with excellent linewidth properties.

Original languageEnglish (US)
Pages (from-to)2944-2946
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number16
DOIs
StatePublished - Oct 14 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers'. Together they form a unique fingerprint.

  • Cite this