Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers

C. Schlichenmaier, Stephan W Koch, W. W. Chow

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The antiguiding or linewidth enhancement factor α is computed microscopically for a series of type-II GaAsSb/GaInAs/GaAs quantum-well structures. The results predict α values below unity at peak gain suggesting highly stable laser operation with excellent linewidth properties.

Original languageEnglish (US)
Pages (from-to)2944-2946
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number16
DOIs
StatePublished - Oct 14 2002
Externally publishedYes

Fingerprint

quantum well lasers
unity
quantum wells
augmentation
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers. / Schlichenmaier, C.; Koch, Stephan W; Chow, W. W.

In: Applied Physics Letters, Vol. 81, No. 16, 14.10.2002, p. 2944-2946.

Research output: Contribution to journalArticle

Schlichenmaier, C. ; Koch, Stephan W ; Chow, W. W. / Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers. In: Applied Physics Letters. 2002 ; Vol. 81, No. 16. pp. 2944-2946.
@article{f0a749cbffda41f388cd4dc2eaa8a277,
title = "Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers",
abstract = "The antiguiding or linewidth enhancement factor α is computed microscopically for a series of type-II GaAsSb/GaInAs/GaAs quantum-well structures. The results predict α values below unity at peak gain suggesting highly stable laser operation with excellent linewidth properties.",
author = "C. Schlichenmaier and Koch, {Stephan W} and Chow, {W. W.}",
year = "2002",
month = "10",
day = "14",
doi = "10.1063/1.1514392",
language = "English (US)",
volume = "81",
pages = "2944--2946",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers

AU - Schlichenmaier, C.

AU - Koch, Stephan W

AU - Chow, W. W.

PY - 2002/10/14

Y1 - 2002/10/14

N2 - The antiguiding or linewidth enhancement factor α is computed microscopically for a series of type-II GaAsSb/GaInAs/GaAs quantum-well structures. The results predict α values below unity at peak gain suggesting highly stable laser operation with excellent linewidth properties.

AB - The antiguiding or linewidth enhancement factor α is computed microscopically for a series of type-II GaAsSb/GaInAs/GaAs quantum-well structures. The results predict α values below unity at peak gain suggesting highly stable laser operation with excellent linewidth properties.

UR - http://www.scopus.com/inward/record.url?scp=79956022928&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956022928&partnerID=8YFLogxK

U2 - 10.1063/1.1514392

DO - 10.1063/1.1514392

M3 - Article

AN - SCOPUS:79956022928

VL - 81

SP - 2944

EP - 2946

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -