Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices

Wenzhong Bao, Gang Liu, Zeng Zhao, Hang Zhang, Dong Yan, Aparna Deshpande, Brian J Leroy, Chun Ning Lau

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobilities as high as 120 000 cm2/(V·s).

Original languageEnglish (US)
Pages (from-to)98-102
Number of pages5
JournalNano Research
Volume3
Issue number2
DOIs
StatePublished - Feb 2010

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Electron beam lithography
Graphene
Lithography
Masks
Evaporation
Impurities
Fabrication
Substrates
Graphene devices

Keywords

  • e-beam evaporation
  • Lithography-free
  • Mobility
  • Shadow mask
  • Suspended graphene

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Bao, W., Liu, G., Zhao, Z., Zhang, H., Yan, D., Deshpande, A., ... Lau, C. N. (2010). Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices. Nano Research, 3(2), 98-102. https://doi.org/10.1007/s12274-010-1013-5

Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices. / Bao, Wenzhong; Liu, Gang; Zhao, Zeng; Zhang, Hang; Yan, Dong; Deshpande, Aparna; Leroy, Brian J; Lau, Chun Ning.

In: Nano Research, Vol. 3, No. 2, 02.2010, p. 98-102.

Research output: Contribution to journalArticle

Bao, Wenzhong ; Liu, Gang ; Zhao, Zeng ; Zhang, Hang ; Yan, Dong ; Deshpande, Aparna ; Leroy, Brian J ; Lau, Chun Ning. / Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices. In: Nano Research. 2010 ; Vol. 3, No. 2. pp. 98-102.
@article{b612b48866554c048617c809974602b8,
title = "Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices",
abstract = "We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobilities as high as 120 000 cm2/(V·s).",
keywords = "e-beam evaporation, Lithography-free, Mobility, Shadow mask, Suspended graphene",
author = "Wenzhong Bao and Gang Liu and Zeng Zhao and Hang Zhang and Dong Yan and Aparna Deshpande and Leroy, {Brian J} and Lau, {Chun Ning}",
year = "2010",
month = "2",
doi = "10.1007/s12274-010-1013-5",
language = "English (US)",
volume = "3",
pages = "98--102",
journal = "Nano Research",
issn = "1998-0124",
publisher = "Press of Tsinghua University",
number = "2",

}

TY - JOUR

T1 - Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices

AU - Bao, Wenzhong

AU - Liu, Gang

AU - Zhao, Zeng

AU - Zhang, Hang

AU - Yan, Dong

AU - Deshpande, Aparna

AU - Leroy, Brian J

AU - Lau, Chun Ning

PY - 2010/2

Y1 - 2010/2

N2 - We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobilities as high as 120 000 cm2/(V·s).

AB - We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobilities as high as 120 000 cm2/(V·s).

KW - e-beam evaporation

KW - Lithography-free

KW - Mobility

KW - Shadow mask

KW - Suspended graphene

UR - http://www.scopus.com/inward/record.url?scp=77949295097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949295097&partnerID=8YFLogxK

U2 - 10.1007/s12274-010-1013-5

DO - 10.1007/s12274-010-1013-5

M3 - Article

AN - SCOPUS:77949295097

VL - 3

SP - 98

EP - 102

JO - Nano Research

JF - Nano Research

SN - 1998-0124

IS - 2

ER -