Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy

Andreas Beyer, Nikolai Knaub, Phil Rosenow, Kakhaber Jandieri, Peter Ludewig, Lars Bannow, Stephan W Koch, Ralf Tonner, Kerstin Volz

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The distribution of Bi atoms in Ga(As,Bi) samples on an atomic scale is investigated using aberration corrected high angle annular dark field imaging. With the help of statistical evaluations, it is shown that the Bi atoms are not randomly distributed. Instead, Bi ordering along the 〈100〉 and 〈101〉 crystallographic directions with chain lengths of up to 5 atoms is identified. Performing electronic structure calculations shows that this chain-like Bi arrangement is energetically favorable relative to isolated Bi atoms due to the stabilization by stronger bonds to shared Ga atoms and to in-plane Ga atoms.

Original languageEnglish (US)
Pages (from-to)22-28
Number of pages7
JournalApplied Materials Today
Volume6
DOIs
StatePublished - Mar 1 2017
Externally publishedYes

Keywords

  • Bismuth compounds
  • Metal organic chemical vapour deposition
  • Ordering
  • Scanning transmission electron microscopy
  • Semiconducting III-V materials

ASJC Scopus subject areas

  • Materials Science(all)

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