Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy

Andreas Beyer; Nikolai Knaub; Phil Rosenow; Kakhaber Jandieri; Peter Ludewig; Lars Bannow; Stephan W Koch; Ralf Tonner; Kerstin Volz

doi:10.1016/j.apmt.2016.11.007

Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy

Andreas Beyer, Nikolai Knaub, Phil Rosenow, Kakhaber Jandieri, Peter Ludewig, Lars Bannow, Stephan W Koch, Ralf Tonner, Kerstin Volz

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The distribution of Bi atoms in Ga(As,Bi) samples on an atomic scale is investigated using aberration corrected high angle annular dark field imaging. With the help of statistical evaluations, it is shown that the Bi atoms are not randomly distributed. Instead, Bi ordering along the 〈100〉 and 〈101〉 crystallographic directions with chain lengths of up to 5 atoms is identified. Performing electronic structure calculations shows that this chain-like Bi arrangement is energetically favorable relative to isolated Bi atoms due to the stabilization by stronger bonds to shared Ga atoms and to in-plane Ga atoms.

Original language	English (US)
Pages (from-to)	22-28
Number of pages	7
Journal	Applied Materials Today
Volume	6
DOIs	https://doi.org/10.1016/j.apmt.2016.11.007
State	Published - Mar 1 2017
Externally published	Yes

Keywords

Bismuth compounds
Metal organic chemical vapour deposition
Ordering
Scanning transmission electron microscopy
Semiconducting III-V materials

ASJC Scopus subject areas

Materials Science(all)

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10.1016/j.apmt.2016.11.007

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Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy. / Beyer, Andreas; Knaub, Nikolai; Rosenow, Phil; Jandieri, Kakhaber; Ludewig, Peter; Bannow, Lars; Koch, Stephan W; Tonner, Ralf; Volz, Kerstin.

In: Applied Materials Today, Vol. 6, 01.03.2017, p. 22-28.

Research output: Contribution to journal › Article › peer-review

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abstract = "The distribution of Bi atoms in Ga(As,Bi) samples on an atomic scale is investigated using aberration corrected high angle annular dark field imaging. With the help of statistical evaluations, it is shown that the Bi atoms are not randomly distributed. Instead, Bi ordering along the 〈100〉 and 〈101〉 crystallographic directions with chain lengths of up to 5 atoms is identified. Performing electronic structure calculations shows that this chain-like Bi arrangement is energetically favorable relative to isolated Bi atoms due to the stabilization by stronger bonds to shared Ga atoms and to in-plane Ga atoms.",

keywords = "Bismuth compounds, Metal organic chemical vapour deposition, Ordering, Scanning transmission electron microscopy, Semiconducting III-V materials",

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AU - Beyer, Andreas

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AU - Rosenow, Phil

AU - Jandieri, Kakhaber

AU - Ludewig, Peter

AU - Bannow, Lars

AU - Koch, Stephan W

AU - Tonner, Ralf

AU - Volz, Kerstin

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