Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy

Andreas Beyer; Nikolai Knaub; Phil Rosenow; Kakhaber Jandieri; Peter Ludewig; Lars Bannow; Stephan W Koch; Ralf Tonner; Kerstin Volz

doi:10.1016/j.apmt.2016.11.007

Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy

Andreas Beyer, Nikolai Knaub, Phil Rosenow, Kakhaber Jandieri, Peter Ludewig, Lars Bannow, Stephan W Koch, Ralf Tonner, Kerstin Volz

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The distribution of Bi atoms in Ga(As,Bi) samples on an atomic scale is investigated using aberration corrected high angle annular dark field imaging. With the help of statistical evaluations, it is shown that the Bi atoms are not randomly distributed. Instead, Bi ordering along the 〈100〉 and 〈101〉 crystallographic directions with chain lengths of up to 5 atoms is identified. Performing electronic structure calculations shows that this chain-like Bi arrangement is energetically favorable relative to isolated Bi atoms due to the stabilization by stronger bonds to shared Ga atoms and to in-plane Ga atoms.

Original language	English (US)
Pages (from-to)	22-28
Number of pages	7
Journal	Applied Materials Today
Volume	6
DOIs	https://doi.org/10.1016/j.apmt.2016.11.007
State	Published - Mar 1 2017
Externally published	Yes

Keywords

Bismuth compounds
Metal organic chemical vapour deposition
Ordering
Scanning transmission electron microscopy
Semiconducting III-V materials

ASJC Scopus subject areas

Materials Science(all)

Access to Document

10.1016/j.apmt.2016.11.007

Cite this

Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy. / Beyer, Andreas; Knaub, Nikolai; Rosenow, Phil; Jandieri, Kakhaber; Ludewig, Peter; Bannow, Lars; Koch, Stephan W; Tonner, Ralf; Volz, Kerstin.

In: Applied Materials Today, Vol. 6, 01.03.2017, p. 22-28.

Research output: Contribution to journal › Article › peer-review

@article{47e4c3743f7b41a69a9f71f7bd8bfe66,

title = "Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy",

abstract = "The distribution of Bi atoms in Ga(As,Bi) samples on an atomic scale is investigated using aberration corrected high angle annular dark field imaging. With the help of statistical evaluations, it is shown that the Bi atoms are not randomly distributed. Instead, Bi ordering along the 〈100〉 and 〈101〉 crystallographic directions with chain lengths of up to 5 atoms is identified. Performing electronic structure calculations shows that this chain-like Bi arrangement is energetically favorable relative to isolated Bi atoms due to the stabilization by stronger bonds to shared Ga atoms and to in-plane Ga atoms.",

keywords = "Bismuth compounds, Metal organic chemical vapour deposition, Ordering, Scanning transmission electron microscopy, Semiconducting III-V materials",

author = "Andreas Beyer and Nikolai Knaub and Phil Rosenow and Kakhaber Jandieri and Peter Ludewig and Lars Bannow and Koch, {Stephan W} and Ralf Tonner and Kerstin Volz",

year = "2017",

month = mar,

day = "1",

doi = "10.1016/j.apmt.2016.11.007",

language = "English (US)",

volume = "6",

pages = "22--28",

journal = "Applied Materials Today",

issn = "2352-9407",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy

AU - Beyer, Andreas

AU - Knaub, Nikolai

AU - Rosenow, Phil

AU - Jandieri, Kakhaber

AU - Ludewig, Peter

AU - Bannow, Lars

AU - Koch, Stephan W

AU - Tonner, Ralf

AU - Volz, Kerstin

PY - 2017/3/1

Y1 - 2017/3/1

N2 - The distribution of Bi atoms in Ga(As,Bi) samples on an atomic scale is investigated using aberration corrected high angle annular dark field imaging. With the help of statistical evaluations, it is shown that the Bi atoms are not randomly distributed. Instead, Bi ordering along the 〈100〉 and 〈101〉 crystallographic directions with chain lengths of up to 5 atoms is identified. Performing electronic structure calculations shows that this chain-like Bi arrangement is energetically favorable relative to isolated Bi atoms due to the stabilization by stronger bonds to shared Ga atoms and to in-plane Ga atoms.

AB - The distribution of Bi atoms in Ga(As,Bi) samples on an atomic scale is investigated using aberration corrected high angle annular dark field imaging. With the help of statistical evaluations, it is shown that the Bi atoms are not randomly distributed. Instead, Bi ordering along the 〈100〉 and 〈101〉 crystallographic directions with chain lengths of up to 5 atoms is identified. Performing electronic structure calculations shows that this chain-like Bi arrangement is energetically favorable relative to isolated Bi atoms due to the stabilization by stronger bonds to shared Ga atoms and to in-plane Ga atoms.

KW - Bismuth compounds

KW - Metal organic chemical vapour deposition

KW - Ordering

KW - Scanning transmission electron microscopy

KW - Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=85007130684&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85007130684&partnerID=8YFLogxK

U2 - 10.1016/j.apmt.2016.11.007

DO - 10.1016/j.apmt.2016.11.007

M3 - Article

AN - SCOPUS:85007130684

VL - 6

SP - 22

EP - 28

JO - Applied Materials Today

JF - Applied Materials Today

SN - 2352-9407

ER -

Local Bi ordering in MOVPE grown Ga(As,Bi) investigated by high resolution scanning transmission electron microscopy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this