Local spectroscopy of the electrically tunable band gap in trilayer graphene

Matthew Yankowitz, Fenglin Wang, Chun Ning Lau, Brian J Leroy

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The stacking order in trilayer graphene plays a critical role in determining the existence of an electric field tunable band gap. We present spatially resolved tunneling spectroscopy measurements of dual gated Bernal (ABA) and rhombohedral (ABC) stacked trilayer graphene devices. We demonstrate that while ABA trilayer graphene remains metallic, ABC trilayer graphene exhibits a widely tunable band gap as a function of electric field. However, we find that charged impurities in the underlying substrate cause substantial spatial fluctuations of the gap size. Our work elucidates the microscopic behavior of trilayer graphene and its consequences for macroscopic devices.

Original languageEnglish (US)
Article number165102
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume87
Issue number16
DOIs
StatePublished - Apr 3 2013

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Graphene
graphene
Energy gap
Spectroscopy
spectroscopy
Electric fields
electric fields
Impurities
Substrates
impurities
causes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Local spectroscopy of the electrically tunable band gap in trilayer graphene. / Yankowitz, Matthew; Wang, Fenglin; Lau, Chun Ning; Leroy, Brian J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 87, No. 16, 165102, 03.04.2013.

Research output: Contribution to journalArticle

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