Low holographic concentration effects on CIGS

Jose E. Castillo, Juan M. Russo, Deming Zhang, Raymond K. Kostuk, Glenn A. Rosenberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

We present the results of combining copper indium gallium (di)selenide (CIGS) photovoltaic cells with holographic planar concentrating film over a broad range of illumination levels. The film, originally designed for silicon bifacial solar applications worked well with the CIGS cells. The Voc, cell efficiency and fill factor reached full operating values at lower light levels; with a significant boost in performance being recorded. The holographic regions of the concentrator act as extended heat transfer surfaces, allowing the CIGS cells to operate at lower operational temperatures than they normally would in a traditional PV application.

Original languageEnglish (US)
Title of host publicationHigh and Low Concentrator Systems for Solar Electric Applications V
DOIs
StatePublished - Oct 26 2010
EventHigh and Low Concentrator Systems for Solar Electric Applications V - San Diego, CA, United States
Duration: Aug 3 2010Aug 4 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7769
ISSN (Print)0277-786X

Other

OtherHigh and Low Concentrator Systems for Solar Electric Applications V
CountryUnited States
CitySan Diego, CA
Period8/3/108/4/10

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Keywords

  • Concentrators
  • Holograms
  • Photovoltaic systems
  • Solar energy
  • Thermal effects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Castillo, J. E., Russo, J. M., Zhang, D., Kostuk, R. K., & Rosenberg, G. A. (2010). Low holographic concentration effects on CIGS. In High and Low Concentrator Systems for Solar Electric Applications V [77690L] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7769). https://doi.org/10.1117/12.862038