Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator

U. Koren, B. I. Miller, Thomas L Koch, G. Eisenstein, R. S. Tucker, I. Bar-Joseph, D. S. Chemla

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

An optical electroabsorption waveguide modulator is described based on the quantum-confined Stark effect in an InGaAs/InP multiple quantum well waveguide. The optical modulator has a high on/off ratio (47:1) with very low insertion loss (2.9 dB) and a 3-dB modulation bandwidth of 3.0 GHz at 0.1 mW optical input power.

Original languageEnglish (US)
Pages (from-to)1132-1134
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number15
DOIs
StatePublished - 1987
Externally publishedYes

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optical waveguides
modulators
quantum wells
Stark effect
insertion loss
waveguides
bandwidth
modulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Koren, U., Miller, B. I., Koch, T. L., Eisenstein, G., Tucker, R. S., Bar-Joseph, I., & Chemla, D. S. (1987). Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator. Applied Physics Letters, 51(15), 1132-1134. https://doi.org/10.1063/1.98761

Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator. / Koren, U.; Miller, B. I.; Koch, Thomas L; Eisenstein, G.; Tucker, R. S.; Bar-Joseph, I.; Chemla, D. S.

In: Applied Physics Letters, Vol. 51, No. 15, 1987, p. 1132-1134.

Research output: Contribution to journalArticle

Koren, U, Miller, BI, Koch, TL, Eisenstein, G, Tucker, RS, Bar-Joseph, I & Chemla, DS 1987, 'Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator', Applied Physics Letters, vol. 51, no. 15, pp. 1132-1134. https://doi.org/10.1063/1.98761
Koren, U. ; Miller, B. I. ; Koch, Thomas L ; Eisenstein, G. ; Tucker, R. S. ; Bar-Joseph, I. ; Chemla, D. S. / Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator. In: Applied Physics Letters. 1987 ; Vol. 51, No. 15. pp. 1132-1134.
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