Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator

U. Koren, B. I. Miller, T. L. Koch, G. Eisenstein, R. S. Tucker, I. Bar-Joseph, D. S. Chemla

Research output: Contribution to journalArticle

80 Scopus citations

Abstract

An optical electroabsorption waveguide modulator is described based on the quantum-confined Stark effect in an InGaAs/InP multiple quantum well waveguide. The optical modulator has a high on/off ratio (47:1) with very low insertion loss (2.9 dB) and a 3-dB modulation bandwidth of 3.0 GHz at 0.1 mW optical input power.

Original languageEnglish (US)
Pages (from-to)1132-1134
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number15
DOIs
StatePublished - Dec 1 1987
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Koren, U., Miller, B. I., Koch, T. L., Eisenstein, G., Tucker, R. S., Bar-Joseph, I., & Chemla, D. S. (1987). Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator. Applied Physics Letters, 51(15), 1132-1134. https://doi.org/10.1063/1.98761