Low-loss monolithic tunable electromagnetic crystal surfaces with planar GaAs Schottky diodes

Hao Xin, H. Kazemi, A. W. Lee, J. A. Higgins, M. J. Rosker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Monolithic tunable electromagnetic crystal (EMXT) surfaces based on semiconductor varactors has been designed and fabricated for various microwave and millimeter wave applications. In order to tackle the problem of high losses associated with this kind of tunable EMXT structures, a high-quality planar air-bridged GaAs Schottky (PAS) diode process has been developed and incorporated to produce low-loss monolithic tunable EMXT surfaces. Finite-element model indicates that analog waveguide phase shifter with EMXT sidewalls can achieve 360° phase shift with less than 3 dB insertion loss. A backside-biasing scheme utilizing through substrate vias has also been developed. Preliminary EMXT reflection measurements show lower loss comparing with previously demonstrated tunable EMXTs. Because of the high cut-off frequency (above THz) of the GaAs Schottky diode, this EMXT technology may be readily extended to higher frequencies applications such as W-Band ESA.

Original languageEnglish (US)
Title of host publicationIEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
Pages435-438
Number of pages4
Volume2
StatePublished - 2003
Externally publishedYes
Event2003 IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North American Radio Science Meeting - Columbus, OH, United States
Duration: Jun 22 2003Jun 27 2003

Other

Other2003 IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North American Radio Science Meeting
CountryUnited States
CityColumbus, OH
Period6/22/036/27/03

Fingerprint

Diodes
Crystals
Varactors
Phase shifters
Cutoff frequency
Insertion losses
Millimeter waves
Phase shift
Waveguides
Microwaves
Semiconductor materials
Substrates
Air

Keywords

  • Electromagnetic crystal
  • Phase shifter
  • Schottky diode

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Xin, H., Kazemi, H., Lee, A. W., Higgins, J. A., & Rosker, M. J. (2003). Low-loss monolithic tunable electromagnetic crystal surfaces with planar GaAs Schottky diodes. In IEEE Antennas and Propagation Society, AP-S International Symposium (Digest) (Vol. 2, pp. 435-438)

Low-loss monolithic tunable electromagnetic crystal surfaces with planar GaAs Schottky diodes. / Xin, Hao; Kazemi, H.; Lee, A. W.; Higgins, J. A.; Rosker, M. J.

IEEE Antennas and Propagation Society, AP-S International Symposium (Digest). Vol. 2 2003. p. 435-438.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Xin, H, Kazemi, H, Lee, AW, Higgins, JA & Rosker, MJ 2003, Low-loss monolithic tunable electromagnetic crystal surfaces with planar GaAs Schottky diodes. in IEEE Antennas and Propagation Society, AP-S International Symposium (Digest). vol. 2, pp. 435-438, 2003 IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North American Radio Science Meeting, Columbus, OH, United States, 6/22/03.
Xin H, Kazemi H, Lee AW, Higgins JA, Rosker MJ. Low-loss monolithic tunable electromagnetic crystal surfaces with planar GaAs Schottky diodes. In IEEE Antennas and Propagation Society, AP-S International Symposium (Digest). Vol. 2. 2003. p. 435-438
Xin, Hao ; Kazemi, H. ; Lee, A. W. ; Higgins, J. A. ; Rosker, M. J. / Low-loss monolithic tunable electromagnetic crystal surfaces with planar GaAs Schottky diodes. IEEE Antennas and Propagation Society, AP-S International Symposium (Digest). Vol. 2 2003. pp. 435-438
@inproceedings{4f4e81310fcb4936adabd62cf3ec50ad,
title = "Low-loss monolithic tunable electromagnetic crystal surfaces with planar GaAs Schottky diodes",
abstract = "Monolithic tunable electromagnetic crystal (EMXT) surfaces based on semiconductor varactors has been designed and fabricated for various microwave and millimeter wave applications. In order to tackle the problem of high losses associated with this kind of tunable EMXT structures, a high-quality planar air-bridged GaAs Schottky (PAS) diode process has been developed and incorporated to produce low-loss monolithic tunable EMXT surfaces. Finite-element model indicates that analog waveguide phase shifter with EMXT sidewalls can achieve 360° phase shift with less than 3 dB insertion loss. A backside-biasing scheme utilizing through substrate vias has also been developed. Preliminary EMXT reflection measurements show lower loss comparing with previously demonstrated tunable EMXTs. Because of the high cut-off frequency (above THz) of the GaAs Schottky diode, this EMXT technology may be readily extended to higher frequencies applications such as W-Band ESA.",
keywords = "Electromagnetic crystal, Phase shifter, Schottky diode",
author = "Hao Xin and H. Kazemi and Lee, {A. W.} and Higgins, {J. A.} and Rosker, {M. J.}",
year = "2003",
language = "English (US)",
volume = "2",
pages = "435--438",
booktitle = "IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)",

}

TY - GEN

T1 - Low-loss monolithic tunable electromagnetic crystal surfaces with planar GaAs Schottky diodes

AU - Xin, Hao

AU - Kazemi, H.

AU - Lee, A. W.

AU - Higgins, J. A.

AU - Rosker, M. J.

PY - 2003

Y1 - 2003

N2 - Monolithic tunable electromagnetic crystal (EMXT) surfaces based on semiconductor varactors has been designed and fabricated for various microwave and millimeter wave applications. In order to tackle the problem of high losses associated with this kind of tunable EMXT structures, a high-quality planar air-bridged GaAs Schottky (PAS) diode process has been developed and incorporated to produce low-loss monolithic tunable EMXT surfaces. Finite-element model indicates that analog waveguide phase shifter with EMXT sidewalls can achieve 360° phase shift with less than 3 dB insertion loss. A backside-biasing scheme utilizing through substrate vias has also been developed. Preliminary EMXT reflection measurements show lower loss comparing with previously demonstrated tunable EMXTs. Because of the high cut-off frequency (above THz) of the GaAs Schottky diode, this EMXT technology may be readily extended to higher frequencies applications such as W-Band ESA.

AB - Monolithic tunable electromagnetic crystal (EMXT) surfaces based on semiconductor varactors has been designed and fabricated for various microwave and millimeter wave applications. In order to tackle the problem of high losses associated with this kind of tunable EMXT structures, a high-quality planar air-bridged GaAs Schottky (PAS) diode process has been developed and incorporated to produce low-loss monolithic tunable EMXT surfaces. Finite-element model indicates that analog waveguide phase shifter with EMXT sidewalls can achieve 360° phase shift with less than 3 dB insertion loss. A backside-biasing scheme utilizing through substrate vias has also been developed. Preliminary EMXT reflection measurements show lower loss comparing with previously demonstrated tunable EMXTs. Because of the high cut-off frequency (above THz) of the GaAs Schottky diode, this EMXT technology may be readily extended to higher frequencies applications such as W-Band ESA.

KW - Electromagnetic crystal

KW - Phase shifter

KW - Schottky diode

UR - http://www.scopus.com/inward/record.url?scp=0042473005&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042473005&partnerID=8YFLogxK

M3 - Conference contribution

VL - 2

SP - 435

EP - 438

BT - IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)

ER -