Low-loss monolithic tunable electromagnetic crystal surfaces with planar GaAs Schottky diodes

H. Xin, H. Kazemi, A. W. Lee, J. A. Higgins, M. J. Rosker

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

Monolithic tunable electromagnetic crystal (EMXT) surfaces based on semiconductor varactors has been designed and fabricated for various microwave and millimeter wave applications. In order to tackle the problem of high losses associated with this kind of tunable EMXT structures, a high-quality planar air-bridged GaAs Schottky (PAS) diode process has been developed and incorporated to produce low-loss monolithic tunable EMXT surfaces. Finite-element model indicates that analog waveguide phase shifter with EMXT sidewalls can achieve 360° phase shift with less than 3 dB insertion loss. A backside-biasing scheme utilizing through substrate vias has also been developed. Preliminary EMXT reflection measurements show lower loss comparing with previously demonstrated tunable EMXTs. Because of the high cut-off frequency (above THz) of the GaAs Schottky diode, this EMXT technology may be readily extended to higher frequencies applications such as W-Band ESA.

Original languageEnglish (US)
Pages (from-to)435-438
Number of pages4
JournalIEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
Volume2
StatePublished - Sep 1 2003
Externally publishedYes
Event2003 IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North American Radio Science Meeting - Columbus, OH, United States
Duration: Jun 22 2003Jun 27 2003

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Keywords

  • Electromagnetic crystal
  • Phase shifter
  • Schottky diode

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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