Low-loss silicon-on-insulator shallow-ridge TE and TM waveguides formed using thermal oxidation

R. Pafchek, R. Tummidi, J. Li, M. A. Webster, E. Chen, T. L. Koch

Research output: Contribution to journalArticlepeer-review

64 Scopus citations

Abstract

A thermal oxidation fabrication technique is employed to form low-loss high-index-contrast silicon shallow-ridge waveguides in silicon-on-insulator (SOI) with maximally tight vertical confinement. Drop-port responses from weakly coupled ring resonators demonstrate propagation losses below 0.36 dB/cm for TE modes. This technique is also combined with "magic width" designs mitigating severe lateral radiation leakage for TM modes to achieve propagation loss values of 0.94 dB/cm. We discuss the fabrication process utilized to form these low-loss waveguides and implications for sensor devices in particular.

Original languageEnglish (US)
Pages (from-to)958-963
Number of pages6
JournalApplied optics
Volume48
Issue number5
DOIs
StatePublished - Feb 10 2009

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

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