Low threshold CW operation of circular-grating surface-emitting DBR lasers using MQW and a self-aligned process

Mahmoud Fallahi, M. Dion, F. Chatenoud, I. M. Templeton, R. Barber, J. Sedivy

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this letter, we present the first room temperature continuous wave operation of circular-grating surface-emitting DBR lasers. The structure is an InGaAs/GaAs strained multi-quantum-well. A modified fabrication process with a better control on the steps is used. A CW threshold current as low as 26 mA at a lasing wavelength of about 977 nm are reported. This is the first demonstration of CW operation for these lasers in any material system.

Original languageEnglish (US)
Pages (from-to)1280-1282
Number of pages3
JournalIEEE Photonics Technology Letters
Volume6
Issue number11
DOIs
StatePublished - Nov 1994
Externally publishedYes

Fingerprint

DBR lasers
Surface emitting lasers
surface emitting lasers
Semiconductor quantum wells
Demonstrations
gratings
Fabrication
Wavelength
thresholds
Lasers
threshold currents
continuous radiation
lasing
quantum wells
Temperature
fabrication
room temperature
wavelengths
lasers
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

Cite this

Low threshold CW operation of circular-grating surface-emitting DBR lasers using MQW and a self-aligned process. / Fallahi, Mahmoud; Dion, M.; Chatenoud, F.; Templeton, I. M.; Barber, R.; Sedivy, J.

In: IEEE Photonics Technology Letters, Vol. 6, No. 11, 11.1994, p. 1280-1282.

Research output: Contribution to journalArticle

Fallahi, Mahmoud ; Dion, M. ; Chatenoud, F. ; Templeton, I. M. ; Barber, R. ; Sedivy, J. / Low threshold CW operation of circular-grating surface-emitting DBR lasers using MQW and a self-aligned process. In: IEEE Photonics Technology Letters. 1994 ; Vol. 6, No. 11. pp. 1280-1282.
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