Low-threshold high-speed 1·55 µm vapour phase transported buried heterostructure lasers (VPTBH)

T. L. Koch, L. A. Coldren, T. J. Bridges, E. G. Burkhardt, P. J. Corvini, B. I. Miller, D. P. Wilt

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

A new 1.55 fim InGaAsP buried heterostructure laser has been fabricated using a hydride vapour phase epitaxial regrowth technique. Thresholds as low as 15 mA have been obtained. In addition, improved high-frequency modulation characteristics have been observed resulting from the lowdoped VPE transported material, with 3 dB detected bandwidths out to ~4.5 GHz.

Original languageEnglish (US)
Pages (from-to)856-857
Number of pages2
JournalElectronics Letters
Volume20
Issue number21
DOIs
StatePublished - Oct 11 1984

    Fingerprint

Keywords

  • Lasers and laser applications

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Koch, T. L., Coldren, L. A., Bridges, T. J., Burkhardt, E. G., Corvini, P. J., Miller, B. I., & Wilt, D. P. (1984). Low-threshold high-speed 1·55 µm vapour phase transported buried heterostructure lasers (VPTBH). Electronics Letters, 20(21), 856-857. https://doi.org/10.1049/el:19840581