Abstract
The maturity of GaAs/AlAs-based technology enabled the fabrication of highly efficient diode lasers based on (AlGaIn)As/GaAs as well as (AlGa)As/GaAs active regions. Furthermore, these material systems have proven to be widely adaptable, because the GaAs/AlAs system allows for the fabrication of various cavity concepts including in-plane as well as vertically emitting laser structures and the emission wavelengths of the above-mentioned active regions can be tailored from the red to the near-infrared wavelength regime. However, the fabrication of GaAs-based telecommunication lasers proved to be difficult due to the high quality requirements in combination with strain-induced defect formation. While the demonstration of 1.3 μm lasers based on Ga(AsSb)/GaAs [1] as well as (GaIn)(NAs)/GaAs [2] was possible, (GaIn)(AsP)/InP and (AlGaIn)As/InP remained the dominant material systems for lasers emitting at wavelengths longer than 1.2 μm.
| Original language | English (US) |
|---|---|
| Title of host publication | 26th International Semiconductor Laser Conference, ISLC 2018 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 221-222 |
| Number of pages | 2 |
| Volume | 2018-September |
| ISBN (Electronic) | 9781538664865 |
| DOIs | |
| State | Published - Oct 30 2018 |
| Event | 26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States Duration: Sep 16 2018 → Sep 19 2018 |
Other
| Other | 26th International Semiconductor Laser Conference, ISLC 2018 |
|---|---|
| Country | United States |
| City | Santa Fe |
| Period | 9/16/18 → 9/19/18 |
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ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm. / Fuchs, C.; Ludewig, P.; Bruggemann, A.; Perez, A. Ruiz; Weseloh, M. J.; Reinhard, S.; Hader, Jorg; Moloney, Jerome V; Baumner, A.; Koch, Stephan W; Stolz, W.
26th International Semiconductor Laser Conference, ISLC 2018. Vol. 2018-September Institute of Electrical and Electronics Engineers Inc., 2018. p. 221-222 8516246.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm
AU - Fuchs, C.
AU - Ludewig, P.
AU - Bruggemann, A.
AU - Perez, A. Ruiz
AU - Weseloh, M. J.
AU - Reinhard, S.
AU - Hader, Jorg
AU - Moloney, Jerome V
AU - Baumner, A.
AU - Koch, Stephan W
AU - Stolz, W.
PY - 2018/10/30
Y1 - 2018/10/30
N2 - The maturity of GaAs/AlAs-based technology enabled the fabrication of highly efficient diode lasers based on (AlGaIn)As/GaAs as well as (AlGa)As/GaAs active regions. Furthermore, these material systems have proven to be widely adaptable, because the GaAs/AlAs system allows for the fabrication of various cavity concepts including in-plane as well as vertically emitting laser structures and the emission wavelengths of the above-mentioned active regions can be tailored from the red to the near-infrared wavelength regime. However, the fabrication of GaAs-based telecommunication lasers proved to be difficult due to the high quality requirements in combination with strain-induced defect formation. While the demonstration of 1.3 μm lasers based on Ga(AsSb)/GaAs [1] as well as (GaIn)(NAs)/GaAs [2] was possible, (GaIn)(AsP)/InP and (AlGaIn)As/InP remained the dominant material systems for lasers emitting at wavelengths longer than 1.2 μm.
AB - The maturity of GaAs/AlAs-based technology enabled the fabrication of highly efficient diode lasers based on (AlGaIn)As/GaAs as well as (AlGa)As/GaAs active regions. Furthermore, these material systems have proven to be widely adaptable, because the GaAs/AlAs system allows for the fabrication of various cavity concepts including in-plane as well as vertically emitting laser structures and the emission wavelengths of the above-mentioned active regions can be tailored from the red to the near-infrared wavelength regime. However, the fabrication of GaAs-based telecommunication lasers proved to be difficult due to the high quality requirements in combination with strain-induced defect formation. While the demonstration of 1.3 μm lasers based on Ga(AsSb)/GaAs [1] as well as (GaIn)(NAs)/GaAs [2] was possible, (GaIn)(AsP)/InP and (AlGaIn)As/InP remained the dominant material systems for lasers emitting at wavelengths longer than 1.2 μm.
UR - http://www.scopus.com/inward/record.url?scp=85057376703&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85057376703&partnerID=8YFLogxK
U2 - 10.1109/ISLC.2018.8516246
DO - 10.1109/ISLC.2018.8516246
M3 - Conference contribution
AN - SCOPUS:85057376703
VL - 2018-September
SP - 221
EP - 222
BT - 26th International Semiconductor Laser Conference, ISLC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
ER -