Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm

C. Fuchs, P. Ludewig, A. Bruggemann, A. Ruiz Perez, M. J. Weseloh, S. Reinhard, Jorg Hader, Jerome V Moloney, A. Baumner, Stephan W Koch, W. Stolz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The maturity of GaAs/AlAs-based technology enabled the fabrication of highly efficient diode lasers based on (AlGaIn)As/GaAs as well as (AlGa)As/GaAs active regions. Furthermore, these material systems have proven to be widely adaptable, because the GaAs/AlAs system allows for the fabrication of various cavity concepts including in-plane as well as vertically emitting laser structures and the emission wavelengths of the above-mentioned active regions can be tailored from the red to the near-infrared wavelength regime. However, the fabrication of GaAs-based telecommunication lasers proved to be difficult due to the high quality requirements in combination with strain-induced defect formation. While the demonstration of 1.3 μm lasers based on Ga(AsSb)/GaAs [1] as well as (GaIn)(NAs)/GaAs [2] was possible, (GaIn)(AsP)/InP and (AlGaIn)As/InP remained the dominant material systems for lasers emitting at wavelengths longer than 1.2 μm.

Original languageEnglish (US)
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages221-222
Number of pages2
Volume2018-September
ISBN (Electronic)9781538664865
DOIs
StatePublished - Oct 30 2018
Event26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States
Duration: Sep 16 2018Sep 19 2018

Other

Other26th International Semiconductor Laser Conference, ISLC 2018
CountryUnited States
CitySanta Fe
Period9/16/189/19/18

Fingerprint

Quantum well lasers
quantum well lasers
thresholds
Lasers
Fabrication
Wavelength
fabrication
lasers
wavelengths
algae
Algae
Telecommunication
Semiconductor lasers
telecommunication
Demonstrations
semiconductor lasers
Infrared radiation
requirements
Defects
cavities

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Fuchs, C., Ludewig, P., Bruggemann, A., Perez, A. R., Weseloh, M. J., Reinhard, S., ... Stolz, W. (2018). Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm. In 26th International Semiconductor Laser Conference, ISLC 2018 (Vol. 2018-September, pp. 221-222). [8516246] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516246

Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm. / Fuchs, C.; Ludewig, P.; Bruggemann, A.; Perez, A. Ruiz; Weseloh, M. J.; Reinhard, S.; Hader, Jorg; Moloney, Jerome V; Baumner, A.; Koch, Stephan W; Stolz, W.

26th International Semiconductor Laser Conference, ISLC 2018. Vol. 2018-September Institute of Electrical and Electronics Engineers Inc., 2018. p. 221-222 8516246.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fuchs, C, Ludewig, P, Bruggemann, A, Perez, AR, Weseloh, MJ, Reinhard, S, Hader, J, Moloney, JV, Baumner, A, Koch, SW & Stolz, W 2018, Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm. in 26th International Semiconductor Laser Conference, ISLC 2018. vol. 2018-September, 8516246, Institute of Electrical and Electronics Engineers Inc., pp. 221-222, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, United States, 9/16/18. https://doi.org/10.1109/ISLC.2018.8516246
Fuchs C, Ludewig P, Bruggemann A, Perez AR, Weseloh MJ, Reinhard S et al. Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm. In 26th International Semiconductor Laser Conference, ISLC 2018. Vol. 2018-September. Institute of Electrical and Electronics Engineers Inc. 2018. p. 221-222. 8516246 https://doi.org/10.1109/ISLC.2018.8516246
Fuchs, C. ; Ludewig, P. ; Bruggemann, A. ; Perez, A. Ruiz ; Weseloh, M. J. ; Reinhard, S. ; Hader, Jorg ; Moloney, Jerome V ; Baumner, A. ; Koch, Stephan W ; Stolz, W. / Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm. 26th International Semiconductor Laser Conference, ISLC 2018. Vol. 2018-September Institute of Electrical and Electronics Engineers Inc., 2018. pp. 221-222
@inproceedings{b5798ba8d27b40e3b41feeef91250865,
title = "Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As {"}w{"}-Quantum Well Lasers Emitting at 1.3 μm",
abstract = "The maturity of GaAs/AlAs-based technology enabled the fabrication of highly efficient diode lasers based on (AlGaIn)As/GaAs as well as (AlGa)As/GaAs active regions. Furthermore, these material systems have proven to be widely adaptable, because the GaAs/AlAs system allows for the fabrication of various cavity concepts including in-plane as well as vertically emitting laser structures and the emission wavelengths of the above-mentioned active regions can be tailored from the red to the near-infrared wavelength regime. However, the fabrication of GaAs-based telecommunication lasers proved to be difficult due to the high quality requirements in combination with strain-induced defect formation. While the demonstration of 1.3 μm lasers based on Ga(AsSb)/GaAs [1] as well as (GaIn)(NAs)/GaAs [2] was possible, (GaIn)(AsP)/InP and (AlGaIn)As/InP remained the dominant material systems for lasers emitting at wavelengths longer than 1.2 μm.",
author = "C. Fuchs and P. Ludewig and A. Bruggemann and Perez, {A. Ruiz} and Weseloh, {M. J.} and S. Reinhard and Jorg Hader and Moloney, {Jerome V} and A. Baumner and Koch, {Stephan W} and W. Stolz",
year = "2018",
month = "10",
day = "30",
doi = "10.1109/ISLC.2018.8516246",
language = "English (US)",
volume = "2018-September",
pages = "221--222",
booktitle = "26th International Semiconductor Laser Conference, ISLC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm

AU - Fuchs, C.

AU - Ludewig, P.

AU - Bruggemann, A.

AU - Perez, A. Ruiz

AU - Weseloh, M. J.

AU - Reinhard, S.

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Baumner, A.

AU - Koch, Stephan W

AU - Stolz, W.

PY - 2018/10/30

Y1 - 2018/10/30

N2 - The maturity of GaAs/AlAs-based technology enabled the fabrication of highly efficient diode lasers based on (AlGaIn)As/GaAs as well as (AlGa)As/GaAs active regions. Furthermore, these material systems have proven to be widely adaptable, because the GaAs/AlAs system allows for the fabrication of various cavity concepts including in-plane as well as vertically emitting laser structures and the emission wavelengths of the above-mentioned active regions can be tailored from the red to the near-infrared wavelength regime. However, the fabrication of GaAs-based telecommunication lasers proved to be difficult due to the high quality requirements in combination with strain-induced defect formation. While the demonstration of 1.3 μm lasers based on Ga(AsSb)/GaAs [1] as well as (GaIn)(NAs)/GaAs [2] was possible, (GaIn)(AsP)/InP and (AlGaIn)As/InP remained the dominant material systems for lasers emitting at wavelengths longer than 1.2 μm.

AB - The maturity of GaAs/AlAs-based technology enabled the fabrication of highly efficient diode lasers based on (AlGaIn)As/GaAs as well as (AlGa)As/GaAs active regions. Furthermore, these material systems have proven to be widely adaptable, because the GaAs/AlAs system allows for the fabrication of various cavity concepts including in-plane as well as vertically emitting laser structures and the emission wavelengths of the above-mentioned active regions can be tailored from the red to the near-infrared wavelength regime. However, the fabrication of GaAs-based telecommunication lasers proved to be difficult due to the high quality requirements in combination with strain-induced defect formation. While the demonstration of 1.3 μm lasers based on Ga(AsSb)/GaAs [1] as well as (GaIn)(NAs)/GaAs [2] was possible, (GaIn)(AsP)/InP and (AlGaIn)As/InP remained the dominant material systems for lasers emitting at wavelengths longer than 1.2 μm.

UR - http://www.scopus.com/inward/record.url?scp=85057376703&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057376703&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2018.8516246

DO - 10.1109/ISLC.2018.8516246

M3 - Conference contribution

AN - SCOPUS:85057376703

VL - 2018-September

SP - 221

EP - 222

BT - 26th International Semiconductor Laser Conference, ISLC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -