Abstract
The maturity of GaAs/AlAs-based technology enabled the fabrication of highly efficient diode lasers based on (AlGaIn)As/GaAs as well as (AlGa)As/GaAs active regions. Furthermore, these material systems have proven to be widely adaptable, because the GaAs/AlAs system allows for the fabrication of various cavity concepts including in-plane as well as vertically emitting laser structures and the emission wavelengths of the above-mentioned active regions can be tailored from the red to the near-infrared wavelength regime. However, the fabrication of GaAs-based telecommunication lasers proved to be difficult due to the high quality requirements in combination with strain-induced defect formation. While the demonstration of 1.3 μm lasers based on Ga(AsSb)/GaAs [1] as well as (GaIn)(NAs)/GaAs [2] was possible, (GaIn)(AsP)/InP and (AlGaIn)As/InP remained the dominant material systems for lasers emitting at wavelengths longer than 1.2 μm.
Original language | English (US) |
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Title of host publication | 26th International Semiconductor Laser Conference, ISLC 2018 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 221-222 |
Number of pages | 2 |
Volume | 2018-September |
ISBN (Electronic) | 9781538664865 |
DOIs | |
State | Published - Oct 30 2018 |
Event | 26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States Duration: Sep 16 2018 → Sep 19 2018 |
Other
Other | 26th International Semiconductor Laser Conference, ISLC 2018 |
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Country | United States |
City | Santa Fe |
Period | 9/16/18 → 9/19/18 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering