Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm

C. Fuchs; P. Ludewig; A. Bruggemann; A. Ruiz Perez; M. J. Weseloh; S. Reinhard; Jorg Hader; Jerome V Moloney; A. Baumner; Stephan W Koch; W. Stolz

doi:10.1109/ISLC.2018.8516246

Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm

C. Fuchs, P. Ludewig, A. Bruggemann, A. Ruiz Perez, M. J. Weseloh, S. Reinhard, Jorg Hader, Jerome V Moloney, A. Baumner, Stephan W Koch, W. Stolz

Optical Sciences, College of

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The maturity of GaAs/AlAs-based technology enabled the fabrication of highly efficient diode lasers based on (AlGaIn)As/GaAs as well as (AlGa)As/GaAs active regions. Furthermore, these material systems have proven to be widely adaptable, because the GaAs/AlAs system allows for the fabrication of various cavity concepts including in-plane as well as vertically emitting laser structures and the emission wavelengths of the above-mentioned active regions can be tailored from the red to the near-infrared wavelength regime. However, the fabrication of GaAs-based telecommunication lasers proved to be difficult due to the high quality requirements in combination with strain-induced defect formation. While the demonstration of 1.3 μm lasers based on Ga(AsSb)/GaAs [1] as well as (GaIn)(NAs)/GaAs [2] was possible, (GaIn)(AsP)/InP and (AlGaIn)As/InP remained the dominant material systems for lasers emitting at wavelengths longer than 1.2 μm.

Original language	English (US)
Title of host publication	26th International Semiconductor Laser Conference, ISLC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	221-222
Number of pages	2
Volume	2018-September
ISBN (Electronic)	9781538664865
DOIs	https://doi.org/10.1109/ISLC.2018.8516246
State	Published - Oct 30 2018
Event	26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States Duration: Sep 16 2018 → Sep 19 2018

Other

Other	26th International Semiconductor Laser Conference, ISLC 2018
Country	United States
City	Santa Fe
Period	9/16/18 → 9/19/18

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/ISLC.2018.8516246

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Fuchs, C., Ludewig, P., Bruggemann, A., Perez, A. R., Weseloh, M. J., Reinhard, S., Hader, J., Moloney, J. V., Baumner, A., Koch, S. W., & Stolz, W. (2018). Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm. In 26th International Semiconductor Laser Conference, ISLC 2018 (Vol. 2018-September, pp. 221-222). [8516246] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516246

Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm. / Fuchs, C.; Ludewig, P.; Bruggemann, A.; Perez, A. Ruiz; Weseloh, M. J.; Reinhard, S.; Hader, Jorg ; Moloney, Jerome V; Baumner, A.; Koch, Stephan W; Stolz, W.

26th International Semiconductor Laser Conference, ISLC 2018. Vol. 2018-September Institute of Electrical and Electronics Engineers Inc., 2018. p. 221-222 8516246.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fuchs, C, Ludewig, P, Bruggemann, A, Perez, AR, Weseloh, MJ, Reinhard, S, Hader, J , Moloney, JV, Baumner, A, Koch, SW & Stolz, W 2018, Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm. in 26th International Semiconductor Laser Conference, ISLC 2018. vol. 2018-September, 8516246, Institute of Electrical and Electronics Engineers Inc., pp. 221-222, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, United States, 9/16/18. https://doi.org/10.1109/ISLC.2018.8516246

Fuchs C, Ludewig P, Bruggemann A, Perez AR, Weseloh MJ, Reinhard S et al. Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm. In 26th International Semiconductor Laser Conference, ISLC 2018. Vol. 2018-September. Institute of Electrical and Electronics Engineers Inc. 2018. p. 221-222. 8516246 https://doi.org/10.1109/ISLC.2018.8516246

Fuchs, C. ; Ludewig, P. ; Bruggemann, A. ; Perez, A. Ruiz ; Weseloh, M. J. ; Reinhard, S. ; Hader, Jorg ; Moloney, Jerome V ; Baumner, A. ; Koch, Stephan W ; Stolz, W. / Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As "w"-Quantum Well Lasers Emitting at 1.3 μm. 26th International Semiconductor Laser Conference, ISLC 2018. Vol. 2018-September Institute of Electrical and Electronics Engineers Inc., 2018. pp. 221-222

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abstract = "The maturity of GaAs/AlAs-based technology enabled the fabrication of highly efficient diode lasers based on (AlGaIn)As/GaAs as well as (AlGa)As/GaAs active regions. Furthermore, these material systems have proven to be widely adaptable, because the GaAs/AlAs system allows for the fabrication of various cavity concepts including in-plane as well as vertically emitting laser structures and the emission wavelengths of the above-mentioned active regions can be tailored from the red to the near-infrared wavelength regime. However, the fabrication of GaAs-based telecommunication lasers proved to be difficult due to the high quality requirements in combination with strain-induced defect formation. While the demonstration of 1.3 μm lasers based on Ga(AsSb)/GaAs [1] as well as (GaIn)(NAs)/GaAs [2] was possible, (GaIn)(AsP)/InP and (AlGaIn)As/InP remained the dominant material systems for lasers emitting at wavelengths longer than 1.2 μm.",

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AU - Bruggemann, A.

AU - Perez, A. Ruiz

AU - Weseloh, M. J.

AU - Reinhard, S.

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Baumner, A.

AU - Koch, Stephan W

AU - Stolz, W.

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AB - The maturity of GaAs/AlAs-based technology enabled the fabrication of highly efficient diode lasers based on (AlGaIn)As/GaAs as well as (AlGa)As/GaAs active regions. Furthermore, these material systems have proven to be widely adaptable, because the GaAs/AlAs system allows for the fabrication of various cavity concepts including in-plane as well as vertically emitting laser structures and the emission wavelengths of the above-mentioned active regions can be tailored from the red to the near-infrared wavelength regime. However, the fabrication of GaAs-based telecommunication lasers proved to be difficult due to the high quality requirements in combination with strain-induced defect formation. While the demonstration of 1.3 μm lasers based on Ga(AsSb)/GaAs [1] as well as (GaIn)(NAs)/GaAs [2] was possible, (GaIn)(AsP)/InP and (AlGaIn)As/InP remained the dominant material systems for lasers emitting at wavelengths longer than 1.2 μm.

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