Luminescence dynamics in Ga(AsBi)

Sebastian Imhof, Christian Wagner, Angela Thränhardt, Alexej Chernikov, Martin Koch, Niko S. Köster, Sangam Chatterjee, Stephan W. Koch, Oleg Rubel, Xianfeng Lu, Shane R. Johnson, Daniel A. Beaton, Thomas Tiedje

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

The temporal evolution of the spectrally resolved luminescence is measured for a Ga(AsBi) sample at low temperatures. The results are analyzed with the help of kinetic Monte Carlo simulations incorporating two disorder scales attributed to alloy disorder and Bi- clustering. An average time of 5 ps is identified as the upper limit for carrier capture into the Bi clusters whereas the extracted hopping rate associated with alloy fluctuations is much faster than the transitions between the individual cluster sites.

Original languageEnglish (US)
Article number161104
JournalApplied Physics Letters
Volume98
Issue number16
DOIs
StatePublished - Apr 18 2011
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Luminescence dynamics in Ga(AsBi)'. Together they form a unique fingerprint.

  • Cite this

    Imhof, S., Wagner, C., Thränhardt, A., Chernikov, A., Koch, M., Köster, N. S., Chatterjee, S., Koch, S. W., Rubel, O., Lu, X., Johnson, S. R., Beaton, D. A., & Tiedje, T. (2011). Luminescence dynamics in Ga(AsBi). Applied Physics Letters, 98(16), [161104]. https://doi.org/10.1063/1.3580773