Magnetic reversal and thermal stability of CoFeB perpendicular magnetic tunnel junction arrays patterned by block copolymer lithography

Kun Hua Tu, Eduardo Fernandez, Hamid Almasi, Weigang Wang, David Navas Otero, Konstantinos Ntetsikas, Dimitrios Moschovas, Apostolos Avgeropoulos, Caroline A. Ross

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First-order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.

Original languageEnglish (US)
Article number275302
JournalNanotechnology
Volume29
Issue number27
DOIs
StatePublished - May 8 2018

Keywords

  • magnetic tunnel junction
  • nanolithography
  • nanomagnetism

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Tu, K. H., Fernandez, E., Almasi, H., Wang, W., Otero, D. N., Ntetsikas, K., Moschovas, D., Avgeropoulos, A., & Ross, C. A. (2018). Magnetic reversal and thermal stability of CoFeB perpendicular magnetic tunnel junction arrays patterned by block copolymer lithography. Nanotechnology, 29(27), [275302]. https://doi.org/10.1088/1361-6528/aabce8