Magnetic tunnel junction based microwave detector

X. Fan, R. Cao, T. Moriyama, Weigang Wang, H. W. Zhang, John Q. Xiao

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

We investigated the tunneling magnetoresistance change in magnetic tunnel junctions in the presence of external microwaves. The changing relative angle between the free layer and the pinned layer results in a rectification of the average resistance change. Due to its miniature size and its sensitivity to the microwave magnetic field, the magnetic tunnel junction could be utilized as a microwave power sensor with the ability to detect microwave frequencies. Studying microwave power and bias current dependencies reveals desired sensor features with linear responses and enhanced signal levels.

Original languageEnglish (US)
Article number122501
JournalApplied Physics Letters
Volume95
Issue number12
DOIs
StatePublished - 2009
Externally publishedYes

Fingerprint

tunnel junctions
microwaves
detectors
sensors
rectification
microwave frequencies
sensitivity
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Fan, X., Cao, R., Moriyama, T., Wang, W., Zhang, H. W., & Xiao, J. Q. (2009). Magnetic tunnel junction based microwave detector. Applied Physics Letters, 95(12), [122501]. https://doi.org/10.1063/1.3231874

Magnetic tunnel junction based microwave detector. / Fan, X.; Cao, R.; Moriyama, T.; Wang, Weigang; Zhang, H. W.; Xiao, John Q.

In: Applied Physics Letters, Vol. 95, No. 12, 122501, 2009.

Research output: Contribution to journalArticle

Fan, X, Cao, R, Moriyama, T, Wang, W, Zhang, HW & Xiao, JQ 2009, 'Magnetic tunnel junction based microwave detector', Applied Physics Letters, vol. 95, no. 12, 122501. https://doi.org/10.1063/1.3231874
Fan, X. ; Cao, R. ; Moriyama, T. ; Wang, Weigang ; Zhang, H. W. ; Xiao, John Q. / Magnetic tunnel junction based microwave detector. In: Applied Physics Letters. 2009 ; Vol. 95, No. 12.
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