Magneto-optic effects in ferromagnetic films: Implications for spin devices

C. E. Tanner, T. Williams, S. Schwall, S. T. Ruggiero, P. Shaklee, S. Potashnik, J. M. Shaw, Charles M Falco

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We present results on the magneto-optic properties of ferromagnetic films deposited on GaAs and SiO2 substrates. Using left- and right-circularly polarized light, we have measured the polarization-dependent photoresponse and reflectivity of Co/GaAs, Fe/GaAs and NiFe/GaAs Schottky diodes and the polarization-dependent reflection and transmission of NiFe/SiO 2 and Co/SiO2 structures as a function of ferromagnetic film thickness, reported here in the range of 7.5-15 nm. Films were prepared by sputtering and molecular-beam epitaxy. Measurements were made in the presence of magnetic fields ranging from -1.2 to +1.2 T both parallel and perpendicular to the sample surface. We find maximum polarization-dependent transmission and photoresponse effects (with respect to left- versus right-circularly polarized light) of 2-4% in magnitude. Taken together the work suggests that magneto-optic effects intrinsic to the films, rather than spin injection across the ferromagnetic/semiconductor interface, are responsible for the observed phenomenology. The work has direct implications for the interpretation of results in ferromagnetic/semiconductor spintronic systems.

Original languageEnglish (US)
Pages (from-to)704-709
Number of pages6
JournalOptics Communications
Volume259
Issue number2
DOIs
StatePublished - Mar 15 2006

Fingerprint

Magnetooptical effects
ferromagnetic films
magneto-optics
Light polarization
Polarization
polarized light
polarization
Semiconductor materials
Magnetoelectronics
Schottky diodes
phenomenology
Molecular beam epitaxy
Sputtering
Film thickness
Diodes
film thickness
molecular beam epitaxy
sputtering
injection
Magnetic fields

Keywords

  • Magneto-optics
  • Spintronics
  • Thin films

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Tanner, C. E., Williams, T., Schwall, S., Ruggiero, S. T., Shaklee, P., Potashnik, S., ... Falco, C. M. (2006). Magneto-optic effects in ferromagnetic films: Implications for spin devices. Optics Communications, 259(2), 704-709. https://doi.org/10.1016/j.optcom.2005.09.046

Magneto-optic effects in ferromagnetic films : Implications for spin devices. / Tanner, C. E.; Williams, T.; Schwall, S.; Ruggiero, S. T.; Shaklee, P.; Potashnik, S.; Shaw, J. M.; Falco, Charles M.

In: Optics Communications, Vol. 259, No. 2, 15.03.2006, p. 704-709.

Research output: Contribution to journalArticle

Tanner, CE, Williams, T, Schwall, S, Ruggiero, ST, Shaklee, P, Potashnik, S, Shaw, JM & Falco, CM 2006, 'Magneto-optic effects in ferromagnetic films: Implications for spin devices', Optics Communications, vol. 259, no. 2, pp. 704-709. https://doi.org/10.1016/j.optcom.2005.09.046
Tanner CE, Williams T, Schwall S, Ruggiero ST, Shaklee P, Potashnik S et al. Magneto-optic effects in ferromagnetic films: Implications for spin devices. Optics Communications. 2006 Mar 15;259(2):704-709. https://doi.org/10.1016/j.optcom.2005.09.046
Tanner, C. E. ; Williams, T. ; Schwall, S. ; Ruggiero, S. T. ; Shaklee, P. ; Potashnik, S. ; Shaw, J. M. ; Falco, Charles M. / Magneto-optic effects in ferromagnetic films : Implications for spin devices. In: Optics Communications. 2006 ; Vol. 259, No. 2. pp. 704-709.
@article{8208f37c340f48c29a9a45a003c43459,
title = "Magneto-optic effects in ferromagnetic films: Implications for spin devices",
abstract = "We present results on the magneto-optic properties of ferromagnetic films deposited on GaAs and SiO2 substrates. Using left- and right-circularly polarized light, we have measured the polarization-dependent photoresponse and reflectivity of Co/GaAs, Fe/GaAs and NiFe/GaAs Schottky diodes and the polarization-dependent reflection and transmission of NiFe/SiO 2 and Co/SiO2 structures as a function of ferromagnetic film thickness, reported here in the range of 7.5-15 nm. Films were prepared by sputtering and molecular-beam epitaxy. Measurements were made in the presence of magnetic fields ranging from -1.2 to +1.2 T both parallel and perpendicular to the sample surface. We find maximum polarization-dependent transmission and photoresponse effects (with respect to left- versus right-circularly polarized light) of 2-4{\%} in magnitude. Taken together the work suggests that magneto-optic effects intrinsic to the films, rather than spin injection across the ferromagnetic/semiconductor interface, are responsible for the observed phenomenology. The work has direct implications for the interpretation of results in ferromagnetic/semiconductor spintronic systems.",
keywords = "Magneto-optics, Spintronics, Thin films",
author = "Tanner, {C. E.} and T. Williams and S. Schwall and Ruggiero, {S. T.} and P. Shaklee and S. Potashnik and Shaw, {J. M.} and Falco, {Charles M}",
year = "2006",
month = "3",
day = "15",
doi = "10.1016/j.optcom.2005.09.046",
language = "English (US)",
volume = "259",
pages = "704--709",
journal = "Optics Communications",
issn = "0030-4018",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - Magneto-optic effects in ferromagnetic films

T2 - Implications for spin devices

AU - Tanner, C. E.

AU - Williams, T.

AU - Schwall, S.

AU - Ruggiero, S. T.

AU - Shaklee, P.

AU - Potashnik, S.

AU - Shaw, J. M.

AU - Falco, Charles M

PY - 2006/3/15

Y1 - 2006/3/15

N2 - We present results on the magneto-optic properties of ferromagnetic films deposited on GaAs and SiO2 substrates. Using left- and right-circularly polarized light, we have measured the polarization-dependent photoresponse and reflectivity of Co/GaAs, Fe/GaAs and NiFe/GaAs Schottky diodes and the polarization-dependent reflection and transmission of NiFe/SiO 2 and Co/SiO2 structures as a function of ferromagnetic film thickness, reported here in the range of 7.5-15 nm. Films were prepared by sputtering and molecular-beam epitaxy. Measurements were made in the presence of magnetic fields ranging from -1.2 to +1.2 T both parallel and perpendicular to the sample surface. We find maximum polarization-dependent transmission and photoresponse effects (with respect to left- versus right-circularly polarized light) of 2-4% in magnitude. Taken together the work suggests that magneto-optic effects intrinsic to the films, rather than spin injection across the ferromagnetic/semiconductor interface, are responsible for the observed phenomenology. The work has direct implications for the interpretation of results in ferromagnetic/semiconductor spintronic systems.

AB - We present results on the magneto-optic properties of ferromagnetic films deposited on GaAs and SiO2 substrates. Using left- and right-circularly polarized light, we have measured the polarization-dependent photoresponse and reflectivity of Co/GaAs, Fe/GaAs and NiFe/GaAs Schottky diodes and the polarization-dependent reflection and transmission of NiFe/SiO 2 and Co/SiO2 structures as a function of ferromagnetic film thickness, reported here in the range of 7.5-15 nm. Films were prepared by sputtering and molecular-beam epitaxy. Measurements were made in the presence of magnetic fields ranging from -1.2 to +1.2 T both parallel and perpendicular to the sample surface. We find maximum polarization-dependent transmission and photoresponse effects (with respect to left- versus right-circularly polarized light) of 2-4% in magnitude. Taken together the work suggests that magneto-optic effects intrinsic to the films, rather than spin injection across the ferromagnetic/semiconductor interface, are responsible for the observed phenomenology. The work has direct implications for the interpretation of results in ferromagnetic/semiconductor spintronic systems.

KW - Magneto-optics

KW - Spintronics

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=31644449172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31644449172&partnerID=8YFLogxK

U2 - 10.1016/j.optcom.2005.09.046

DO - 10.1016/j.optcom.2005.09.046

M3 - Article

AN - SCOPUS:31644449172

VL - 259

SP - 704

EP - 709

JO - Optics Communications

JF - Optics Communications

SN - 0030-4018

IS - 2

ER -