Magnetoresistance peaks in the neighborhood of coercivity in magneto-optical recording media

Roger A. Hajjar, Masud Mansuripur

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Perpendicular magnetoresistance data performed on magneto-optical samples with uniaxial magnetic anisotropy (perpendicular to the film plane) show a change of the resistance ΔR/R when the applied field reaches the coercive field. The various mechanisms that can lead to this phenomenon are investigated based on different magneto-optical films. In particular, the interaction of magnetic domains and domain walls with the electric current is interesting. Separating the two effects is important to understanding of the various galvanomagnetic and magnetic processes in these films. Three different mechanisms are considered in order to explain the data: The first mechanism is associated with the Hall effect, the second mechanism involves the anisotropic resistivity, and the third mechanism is related to the s-d scattering effect. Some of the experimental results are explained by modeling the current and electric-field distribution in these films. In the simulations the film is modeled by a two- or three-dimensional lattice with each branch in the lattice having its own resistivity tensor in order to simulate magnetic domains and domain walls in the film.

Original languageEnglish (US)
Pages (from-to)1528-1538
Number of pages11
JournalJournal of Applied Physics
Volume72
Issue number4
DOIs
StatePublished - 1992

Fingerprint

coercivity
recording
magnetic domains
domain wall
electrical resistivity
electric current
Hall effect
tensors
anisotropy
electric fields
scattering
simulation
interactions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Magnetoresistance peaks in the neighborhood of coercivity in magneto-optical recording media. / Hajjar, Roger A.; Mansuripur, Masud.

In: Journal of Applied Physics, Vol. 72, No. 4, 1992, p. 1528-1538.

Research output: Contribution to journalArticle

@article{8aadc8924a4a4808a0d11c8cb5b8c80c,
title = "Magnetoresistance peaks in the neighborhood of coercivity in magneto-optical recording media",
abstract = "Perpendicular magnetoresistance data performed on magneto-optical samples with uniaxial magnetic anisotropy (perpendicular to the film plane) show a change of the resistance ΔR/R when the applied field reaches the coercive field. The various mechanisms that can lead to this phenomenon are investigated based on different magneto-optical films. In particular, the interaction of magnetic domains and domain walls with the electric current is interesting. Separating the two effects is important to understanding of the various galvanomagnetic and magnetic processes in these films. Three different mechanisms are considered in order to explain the data: The first mechanism is associated with the Hall effect, the second mechanism involves the anisotropic resistivity, and the third mechanism is related to the s-d scattering effect. Some of the experimental results are explained by modeling the current and electric-field distribution in these films. In the simulations the film is modeled by a two- or three-dimensional lattice with each branch in the lattice having its own resistivity tensor in order to simulate magnetic domains and domain walls in the film.",
author = "Hajjar, {Roger A.} and Masud Mansuripur",
year = "1992",
doi = "10.1063/1.351721",
language = "English (US)",
volume = "72",
pages = "1528--1538",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Magnetoresistance peaks in the neighborhood of coercivity in magneto-optical recording media

AU - Hajjar, Roger A.

AU - Mansuripur, Masud

PY - 1992

Y1 - 1992

N2 - Perpendicular magnetoresistance data performed on magneto-optical samples with uniaxial magnetic anisotropy (perpendicular to the film plane) show a change of the resistance ΔR/R when the applied field reaches the coercive field. The various mechanisms that can lead to this phenomenon are investigated based on different magneto-optical films. In particular, the interaction of magnetic domains and domain walls with the electric current is interesting. Separating the two effects is important to understanding of the various galvanomagnetic and magnetic processes in these films. Three different mechanisms are considered in order to explain the data: The first mechanism is associated with the Hall effect, the second mechanism involves the anisotropic resistivity, and the third mechanism is related to the s-d scattering effect. Some of the experimental results are explained by modeling the current and electric-field distribution in these films. In the simulations the film is modeled by a two- or three-dimensional lattice with each branch in the lattice having its own resistivity tensor in order to simulate magnetic domains and domain walls in the film.

AB - Perpendicular magnetoresistance data performed on magneto-optical samples with uniaxial magnetic anisotropy (perpendicular to the film plane) show a change of the resistance ΔR/R when the applied field reaches the coercive field. The various mechanisms that can lead to this phenomenon are investigated based on different magneto-optical films. In particular, the interaction of magnetic domains and domain walls with the electric current is interesting. Separating the two effects is important to understanding of the various galvanomagnetic and magnetic processes in these films. Three different mechanisms are considered in order to explain the data: The first mechanism is associated with the Hall effect, the second mechanism involves the anisotropic resistivity, and the third mechanism is related to the s-d scattering effect. Some of the experimental results are explained by modeling the current and electric-field distribution in these films. In the simulations the film is modeled by a two- or three-dimensional lattice with each branch in the lattice having its own resistivity tensor in order to simulate magnetic domains and domain walls in the film.

UR - http://www.scopus.com/inward/record.url?scp=0004402949&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0004402949&partnerID=8YFLogxK

U2 - 10.1063/1.351721

DO - 10.1063/1.351721

M3 - Article

AN - SCOPUS:0004402949

VL - 72

SP - 1528

EP - 1538

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

ER -