Many-body aspects of excitonic Rabi oscillations in semiconductors

R. Binder, M. Lindberg, A. Schulzgen, M. E. Donavan, K. Wundke, H. M. Gibbs, G. Khitrova, N. Peyghambarian

Research output: Contribution to journalConference article

Abstract

A theoretical study of excitonic Rabi oscillations in semiconductor quantum wells is presented. Fundamental differences between excitonic Rabi oscillations and optical Rabi oscillations in ideal atomic or molecular 2-level systems are due to the existence of the continuous 1-particle spectrum in solids (energy bands) and the resulting strong effects of the Coulomb interaction, such as the attractive electron-hole interaction and the repulsive exchange interaction. In spite of these fundamental differences, Rabi-like oscillations of the excited electron-hole densities are computed for the case of resonant optical pumping of excitons. We compare our theoretical results with our recent experimental observation of excitonic Rabi oscillations.

Original languageEnglish (US)
Pages (from-to)80-87
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3625
DOIs
StatePublished - Jan 1 1999
EventProceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII - San Jose, CA, USA
Duration: Jan 25 1999Jan 29 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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