Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium

W. W. Chow, M. F. Pereira, Stephan W Koch

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Abstract

The carrier density modulation response of a semiconductor laser medium is analyzed. The differential gain and linewidth enhancement factor are computed as functions of strain and threshold gain. The example of InGaAs/InP with different InAs content is used to illustrate the situations of zero, tensile and compressive strain.

Original languageEnglish (US)
Pages (from-to)758-760
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number7
DOIs
Publication statusPublished - 1992

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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