Abstract
The carrier density modulation response of a semiconductor laser medium is analyzed. The differential gain and linewidth enhancement factor are computed as functions of strain and threshold gain. The example of InGaAs/InP with different InAs content is used to illustrate the situations of zero, tensile and compressive strain.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 758-760 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 61 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1992 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Chow, W. W., Pereira, M. F., & Koch, S. W. (1992). Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium. Applied Physics Letters, 61(7), 758-760. https://doi.org/10.1063/1.107789