Abstract
The carrier density modulation response of a semiconductor laser medium is analyzed. The differential gain and linewidth enhancement factor are computed as functions of strain and threshold gain. The example of InGaAs/InP with different InAs content is used to illustrate the situations of zero, tensile and compressive strain.
Original language | English (US) |
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Pages (from-to) | 758-760 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 61 |
Issue number | 7 |
DOIs | |
State | Published - 1992 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)