Maskless lithography with solid immersion lens nano probes

Tom Milster, Tao Chen, Dongseok Nam, Ed Schlesinger

Research output: Contribution to journalConference article

5 Scopus citations

Abstract

The International Technology Roadmap for Semiconductors (ITRS) shows that 45 nm and lower feature sizes are required in lithographic production before the year 2007. Both immersion lithography and EUV lithography can play major roles in realizing this goal. However, a maskless lithography system capable of producing 45 nm features is an attractive option for small-volume semiconductor fabrication, such as with ASIC manufactures. Compared with a conventional lithography system, the maskless feature of the system allows the chip designer to be free of the very expensive process of mask fabrication and to shortcut development time. In this paper, we discuss a new maskless lithography concept employing an array of solid immersion lens (SIL) nano-probes. The nano-probes are efficient near-field transducers. Each transducer is the combination a SIL, a dielectric probe tip and an antenna structure. The nano-probes are fabricated in arrays that dramatically improve throughput. By combining these technologies, it should be possible to fabricate an efficient array of near-field transducers with optical spot dimensions of around 20 nm when illuminated by a 405 nm laser diode source. This paper plans to address, for the first time, the efficient generation of an array of light spots with dimensions of λ/20 or less that couple efficiently into dielectric films, like photoresist.

Original languageEnglish (US)
Article number59
Pages (from-to)545-556
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5567
Issue numberPART 1
DOIs
StatePublished - Dec 1 2004
Event24th Annual BACUS Symposium on Photomask Technology - Monterey, CA, United States
Duration: Sep 14 2004Sep 17 2004

Keywords

  • Maskless lithography
  • Near-field transducers
  • Solid immersion lens

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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