Material removal and particulate generation during abrasion of copper films using a fixed abrasive pad

Wayne H. Huang, Subramanian Tamilmani, Creighton Anderson, Srini Raghavan

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8 Scopus citations

Abstract

Minimization of particulates levels during the chemical-mechanical planarization (CMP) process as well as in the waste streams is possible through the use of a fixed abrasive pad (FAP). The abrasion of electrodeposited copper films using an alumina-based FAP was studied in hydrogen peroxide and hydroxylamine-based chemistries. The removal rate of copper in hydrogen peroxide solutions was much lower than that in hydroxylamine-based solutions in the pH range of 3 to 9. The addition of citrate to peroxide solution enhances the removal rate of copper to a level that is comparable to removal rates in hydroxylamine-based solutions. Abrasion in a hydrogen peroxide solution resulted in the formation of copper and aluminum-based particulates in the solution. The addition of citrate to peroxide solutions reduced the generation of copper-based particulates that were generated in solution. In hydroxylamine-based solutions, particulate generation was minimal.

Original languageEnglish (US)
Pages (from-to)525-530
Number of pages6
JournalIEEE Transactions on Semiconductor Manufacturing
Volume17
Issue number4
DOIs
Publication statusPublished - Nov 2004

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Keywords

  • Abrasive-free chemistries
  • Citric acid
  • Copper chemical-mechanical polishing (CMP)
  • Fixed abrasive pad
  • Hydrogen peroxide
  • Hydroxylamine

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

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