MBE growth of multiple quantum wells with room-temperature exciton peaks at 1.3 μm

Galina Khitrova, T. Iwabuchi, H. M. Gibbs

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

GaAlInAs AlInAs multiple quantum wells have been grown lattice matched on InP substrates by taking into account the time dependence of the fluxes as the shutters open and close. RHEED oscillations are observed and used to calibrate layer thicknesses and growth quality. The half width of the lowest exciton peak is 12 meV.

Original languageEnglish (US)
Pages (from-to)439-441
Number of pages3
JournalSuperlattices and Microstructures
Volume8
Issue number4
DOIs
StatePublished - 1990

Fingerprint

Reflection high energy electron diffraction
shutters
Molecular beam epitaxy
Excitons
Semiconductor quantum wells
time dependence
excitons
quantum wells
Fluxes
oscillations
room temperature
Substrates
Temperature
LDS 751

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

MBE growth of multiple quantum wells with room-temperature exciton peaks at 1.3 μm. / Khitrova, Galina; Iwabuchi, T.; Gibbs, H. M.

In: Superlattices and Microstructures, Vol. 8, No. 4, 1990, p. 439-441.

Research output: Contribution to journalArticle

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