MBE growth of multiple quantum wells with room-temperature exciton peaks at 1.3 μm

G. Khitrova, T. Iwabuchi, H. M. Gibbs

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

GaAlInAs AlInAs multiple quantum wells have been grown lattice matched on InP substrates by taking into account the time dependence of the fluxes as the shutters open and close. RHEED oscillations are observed and used to calibrate layer thicknesses and growth quality. The half width of the lowest exciton peak is 12 meV.

Original languageEnglish (US)
Pages (from-to)439-441
Number of pages3
JournalSuperlattices and Microstructures
Volume8
Issue number4
DOIs
StatePublished - 1990

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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