MBE growth of ultrathin Co films on a Si(1 1 1) surface with ultrathin buffer layers

Kyoko Hyomi, Akihiro Murayama, Yasuo Oka, Shinji Kondoh, Charles M. Falco

Research output: Contribution to journalArticle

Abstract

We have grown hetero-epitaxially ultrathin Co films on a 7 × 7-Si(1 1 1) surface using buffer layers of Au and Cu, where the thickness of each film is controlled to atomic-scale dimensions. The film structure and related magnetic properties are investigated. The hcp-(0 0 0 1) planes are identified in Co deposited on the Au/Cu surface, while the fcc-(1 1 1) planes are dominant with a Cu-buffer layer. Perpendicular magnetic anisotropy constants in Co indicate sharp thickness-independent interfaces and bulk-like crystallinity even in a monatomic thickness region of < 2 monolayers of Co. Structure related inhomogeneities are quantified as a function of Co thickness for various overlayers by the spin-wave spectrum width. In the results, we show a successful fabrication of epitaxial growth of ultrathin Co films on the Au/Cu/Si surface with a well-defined magnetic structure.

Original languageEnglish (US)
Pages (from-to)1383-1387
Number of pages5
JournalJournal of Crystal Growth
Volume237-239
Issue number1-4
DOIs
StatePublished - Apr 2002

Keywords

  • A1. interfaces
  • A3. Molecular beam epitaxy
  • B1. Metals
  • B2. Magnetic properties

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'MBE growth of ultrathin Co films on a Si(1 1 1) surface with ultrathin buffer layers'. Together they form a unique fingerprint.

  • Cite this