Mean-field approximation in semiconductor laser modeling

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A mean-field model for light propagation in wide-aperture, lossy semiconductor lasers is derived and validated by comparison with a full counterpropagating wave code. The model includes inhomogeneities transverse to (index or gain guiding) and along the laser structure in addition to light diffraction and carrier diffusion. The model is tested on single-stripe index- and gain-guided lasers, on multistripe index- and gain-guided laser arrays, and on broad-area lasers.

Original languageEnglish (US)
Pages (from-to)831-838
Number of pages8
JournalPhysical Review A
Volume50
Issue number1
DOIs
StatePublished - 1994

Fingerprint

semiconductor lasers
approximation
lasers
laser arrays
inhomogeneity
apertures
propagation
diffraction

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Atomic and Molecular Physics, and Optics

Cite this

Mean-field approximation in semiconductor laser modeling. / Ru, P.; Moloney, Jerome V; Indik, Robert A.

In: Physical Review A, Vol. 50, No. 1, 1994, p. 831-838.

Research output: Contribution to journalArticle

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