Mean-field approximation in semiconductor laser modeling

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

A mean-field model for light propagation in wide-aperture, lossy semiconductor lasers is derived and validated by comparison with a full counterpropagating wave code. The model includes inhomogeneities transverse to (index or gain guiding) and along the laser structure in addition to light diffraction and carrier diffusion. The model is tested on single-stripe index- and gain-guided lasers, on multistripe index- and gain-guided laser arrays, and on broad-area lasers.

Original languageEnglish (US)
Pages (from-to)831-838
Number of pages8
JournalPhysical Review A
Volume50
Issue number1
DOIs
StatePublished - Jan 1 1994

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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