Mean residence time and removal rate studies in ILD CMP

Ara Philipossian, Erin Mitchell

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Mean residence time (MRT) in the wafer-pad region was shown to be highly dependent on slurry flow rate, wafer pressure, and relative pad-wafer velocity. MRT was also shown to be a linear function of coefficient of friction. The latter was envisioned to be an indication of the tortuosity of the path bounded in the wafer-pad interface. The extent of process transients during chemical mechanical polishing (CMP) was quantified, and it was shown that the average time it took for fresh incoming fluid (i.e., slurry, water, or other active agents) to displace the existing fluid in the pad-wafer region yielded important information regarding fluid concentration near the wafer as well as the kinetics of the process. A new parameter, the turnover ratio, which is defined as the ratio of the MRT to the polish time, was developed to quantify the extent of abrasive concentration transients during a typical polish. This parameter was found to significantly impact the interlayer dielectric (ELD) removal rate and was deemed critical for process optimization considerations.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume151
Issue number6
DOIs
StatePublished - 2004

Fingerprint

Chemical mechanical polishing
polishing
Industrial Oils
wafers
Fluids
Abrasives
fluids
Flow rate
Friction
Kinetics
Water
abrasives
coefficient of friction
interlayers
indication
flow velocity
optimization
kinetics
water

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Mean residence time and removal rate studies in ILD CMP. / Philipossian, Ara; Mitchell, Erin.

In: Journal of the Electrochemical Society, Vol. 151, No. 6, 2004.

Research output: Contribution to journalArticle

@article{c45753f9f90a45118ee2b53e0f50581d,
title = "Mean residence time and removal rate studies in ILD CMP",
abstract = "Mean residence time (MRT) in the wafer-pad region was shown to be highly dependent on slurry flow rate, wafer pressure, and relative pad-wafer velocity. MRT was also shown to be a linear function of coefficient of friction. The latter was envisioned to be an indication of the tortuosity of the path bounded in the wafer-pad interface. The extent of process transients during chemical mechanical polishing (CMP) was quantified, and it was shown that the average time it took for fresh incoming fluid (i.e., slurry, water, or other active agents) to displace the existing fluid in the pad-wafer region yielded important information regarding fluid concentration near the wafer as well as the kinetics of the process. A new parameter, the turnover ratio, which is defined as the ratio of the MRT to the polish time, was developed to quantify the extent of abrasive concentration transients during a typical polish. This parameter was found to significantly impact the interlayer dielectric (ELD) removal rate and was deemed critical for process optimization considerations.",
author = "Ara Philipossian and Erin Mitchell",
year = "2004",
doi = "10.1149/1.1731539",
language = "English (US)",
volume = "151",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "6",

}

TY - JOUR

T1 - Mean residence time and removal rate studies in ILD CMP

AU - Philipossian, Ara

AU - Mitchell, Erin

PY - 2004

Y1 - 2004

N2 - Mean residence time (MRT) in the wafer-pad region was shown to be highly dependent on slurry flow rate, wafer pressure, and relative pad-wafer velocity. MRT was also shown to be a linear function of coefficient of friction. The latter was envisioned to be an indication of the tortuosity of the path bounded in the wafer-pad interface. The extent of process transients during chemical mechanical polishing (CMP) was quantified, and it was shown that the average time it took for fresh incoming fluid (i.e., slurry, water, or other active agents) to displace the existing fluid in the pad-wafer region yielded important information regarding fluid concentration near the wafer as well as the kinetics of the process. A new parameter, the turnover ratio, which is defined as the ratio of the MRT to the polish time, was developed to quantify the extent of abrasive concentration transients during a typical polish. This parameter was found to significantly impact the interlayer dielectric (ELD) removal rate and was deemed critical for process optimization considerations.

AB - Mean residence time (MRT) in the wafer-pad region was shown to be highly dependent on slurry flow rate, wafer pressure, and relative pad-wafer velocity. MRT was also shown to be a linear function of coefficient of friction. The latter was envisioned to be an indication of the tortuosity of the path bounded in the wafer-pad interface. The extent of process transients during chemical mechanical polishing (CMP) was quantified, and it was shown that the average time it took for fresh incoming fluid (i.e., slurry, water, or other active agents) to displace the existing fluid in the pad-wafer region yielded important information regarding fluid concentration near the wafer as well as the kinetics of the process. A new parameter, the turnover ratio, which is defined as the ratio of the MRT to the polish time, was developed to quantify the extent of abrasive concentration transients during a typical polish. This parameter was found to significantly impact the interlayer dielectric (ELD) removal rate and was deemed critical for process optimization considerations.

UR - http://www.scopus.com/inward/record.url?scp=2942640255&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942640255&partnerID=8YFLogxK

U2 - 10.1149/1.1731539

DO - 10.1149/1.1731539

M3 - Article

AN - SCOPUS:2942640255

VL - 151

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 6

ER -