Measurement of intensity-dependent carrier lifetime in doping superlattices

A. Chavez-Pirson, S. H. Park, M. Pereira, Nasser N Peyghambarian, J. A. Lehman, P. P. Ruden, M. K. Hibbs-Brenner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


A structure grown by metalorganic chemical vapor deposition (MOCVD), consisting of ten periods of alternating layers of n- and p-doped GaAs 130-nm thick with a doping concentration of 2 × 1017, was studied. The nonlinear transmission spectrum as a function of intensity as well as the intensity-dependent carrier buildup and decay lifetimes were measured directly using a pump-probe technique. The differential transmission spectrum (ΔT/T) at various pump intensities and the buildup time required to obtain the maximum modulation for a given intensity are shown and discussed. The intensity-dependent decay dynamics was measured by delaying the probe relative to the falling edge of the pump pulse. On a log-log scale the decay of the maximum modulation is linear, indicating a decay time that increases exponentially with decreasing carrier density. Both the buildup and decay dynamics can be effectively modeled with a rate equation whose carrier decay time depends exponentially on carrier density.

Original languageEnglish (US)
Editors Anon
PublisherPubl by IEEE
Number of pages2
ISBN (Print)1557520860
Publication statusPublished - 1989
EventSummaries of Papers Presented at the Conference on Lasers and Electro-Optics - Baltimore, MD, USA
Duration: Apr 24 1989Apr 28 1989


OtherSummaries of Papers Presented at the Conference on Lasers and Electro-Optics
CityBaltimore, MD, USA


ASJC Scopus subject areas

  • Engineering(all)

Cite this

Chavez-Pirson, A., Park, S. H., Pereira, M., Peyghambarian, N. N., Lehman, J. A., Ruden, P. P., & Hibbs-Brenner, M. K. (1989). Measurement of intensity-dependent carrier lifetime in doping superlattices. In Anon (Ed.), CONFERENCE ON LASERS AND ELECTRO-0PTICS (pp. 284-285). Publ by IEEE.