Measurement of intraexcitonic transition signatures via THz time-domain spectroscopy: A GaAs/(AlGa)As - (GaIn)As/GaAs comparison

T. Grunwald, T. Jung, D. Köhler, Stephan W Koch, Galina Khitrova, H. M. Gibbs, R. Hey, S. Chatterjee

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8 Citations (Scopus)

Abstract

In this article we present our results on THz-spectroscopy of intra-excitonic transitions. Especially, properties of different III-V multi quantum well systems are investigated. After an introduction to the methodology of THz Time-Domain Spectroscopy, results for both a GaAs/(AlGa)As and a (GaIn)As/GaAs multi quantum well structure are presented. We find good agreement with previous experiments [1,2] for the GaAs/(AlGa)As structure, while the (GaIn)As/GaAs structure behaves significantly different.

Original languageEnglish (US)
Pages (from-to)500-503
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue number2
DOIs
StatePublished - 2009

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Measurement of intraexcitonic transition signatures via THz time-domain spectroscopy : A GaAs/(AlGa)As - (GaIn)As/GaAs comparison. / Grunwald, T.; Jung, T.; Köhler, D.; Koch, Stephan W; Khitrova, Galina; Gibbs, H. M.; Hey, R.; Chatterjee, S.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 6, No. 2, 2009, p. 500-503.

Research output: Contribution to journalArticle

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