Measurement of intraexcitonic transition signatures via THz time-domain spectroscopy: A GaAs/(AlGa)As - (GaIn)As/GaAs comparison

T. Grunwald, T. Jung, D. Köhler, S. W. Koch, G. Khitrova, H. M. Gibbs, R. Hey, S. Chatterjee

Research output: Contribution to journalConference article

8 Scopus citations

Abstract

In this article we present our results on THz-spectroscopy of intra-excitonic transitions. Especially, properties of different III-V multi quantum well systems are investigated. After an introduction to the methodology of THz Time-Domain Spectroscopy, results for both a GaAs/(AlGa)As and a (GaIn)As/GaAs multi quantum well structure are presented. We find good agreement with previous experiments [1,2] for the GaAs/(AlGa)As structure, while the (GaIn)As/GaAs structure behaves significantly different.

Original languageEnglish (US)
Pages (from-to)500-503
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue number2
DOIs
StatePublished - Dec 1 2009
Event9th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, NOEKS 9 - Klink/Muritz, Germany
Duration: May 26 2008May 29 2008

ASJC Scopus subject areas

  • Condensed Matter Physics

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