Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing

Stanley K H Pau, J. Kuhl, F. Scholz, V. Haerle, M. A. Khan, C. J. Sun

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The density and temperature dependence of the exciton dephasing time of two hexagonal GaN films on sapphire is measured using degenerate four-wave mixing (DFWM). The residual 4 ps dephasing time at low temperature and density is caused by exciton-impurity scattering. We present a theory of DFWM for various amount of inhomogeneous broadening. Good agreement of the temperature dependence of the dephasing time is found between theory and experiment.

Original languageEnglish (US)
Pages (from-to)557-559
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number5
DOIs
StatePublished - 1998
Externally publishedYes

Fingerprint

four-wave mixing
sapphire
excitons
temperature dependence
impurities
scattering

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing. / Pau, Stanley K H; Kuhl, J.; Scholz, F.; Haerle, V.; Khan, M. A.; Sun, C. J.

In: Applied Physics Letters, Vol. 72, No. 5, 1998, p. 557-559.

Research output: Contribution to journalArticle

Pau, Stanley K H ; Kuhl, J. ; Scholz, F. ; Haerle, V. ; Khan, M. A. ; Sun, C. J. / Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing. In: Applied Physics Letters. 1998 ; Vol. 72, No. 5. pp. 557-559.
@article{498723a93baa4cdba205cce47fd3fa6a,
title = "Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing",
abstract = "The density and temperature dependence of the exciton dephasing time of two hexagonal GaN films on sapphire is measured using degenerate four-wave mixing (DFWM). The residual 4 ps dephasing time at low temperature and density is caused by exciton-impurity scattering. We present a theory of DFWM for various amount of inhomogeneous broadening. Good agreement of the temperature dependence of the dephasing time is found between theory and experiment.",
author = "Pau, {Stanley K H} and J. Kuhl and F. Scholz and V. Haerle and Khan, {M. A.} and Sun, {C. J.}",
year = "1998",
doi = "10.1063/1.120757",
language = "English (US)",
volume = "72",
pages = "557--559",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing

AU - Pau, Stanley K H

AU - Kuhl, J.

AU - Scholz, F.

AU - Haerle, V.

AU - Khan, M. A.

AU - Sun, C. J.

PY - 1998

Y1 - 1998

N2 - The density and temperature dependence of the exciton dephasing time of two hexagonal GaN films on sapphire is measured using degenerate four-wave mixing (DFWM). The residual 4 ps dephasing time at low temperature and density is caused by exciton-impurity scattering. We present a theory of DFWM for various amount of inhomogeneous broadening. Good agreement of the temperature dependence of the dephasing time is found between theory and experiment.

AB - The density and temperature dependence of the exciton dephasing time of two hexagonal GaN films on sapphire is measured using degenerate four-wave mixing (DFWM). The residual 4 ps dephasing time at low temperature and density is caused by exciton-impurity scattering. We present a theory of DFWM for various amount of inhomogeneous broadening. Good agreement of the temperature dependence of the dephasing time is found between theory and experiment.

UR - http://www.scopus.com/inward/record.url?scp=0032472657&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032472657&partnerID=8YFLogxK

U2 - 10.1063/1.120757

DO - 10.1063/1.120757

M3 - Article

AN - SCOPUS:0032472657

VL - 72

SP - 557

EP - 559

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -