Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing

S. Pau, J. Kuhl, F. Scholz, V. Haerle, M. A. Khan, C. J. Sun

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

The density and temperature dependence of the exciton dephasing time of two hexagonal GaN films on sapphire is measured using degenerate four-wave mixing (DFWM). The residual 4 ps dephasing time at low temperature and density is caused by exciton-impurity scattering. We present a theory of DFWM for various amount of inhomogeneous broadening. Good agreement of the temperature dependence of the dephasing time is found between theory and experiment.

Original languageEnglish (US)
Pages (from-to)557-559
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number5
DOIs
StatePublished - Dec 1 1998
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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