Measurements of residual stresses in thin films using micro-rotating-structures

Xin Zhang, Tong Yi Zhang, Yitshak Zohar

Research output: Contribution to journalArticle

63 Scopus citations

Abstract

In the present study, micro-rotating-structures for local measurements of residual stresses in a thin film were simulated by the finite element method (FEM). A sensitivity factor - the ratio of the deflection of the micro-structure to the normalized residual stress is introduced and tabulated from the FEM results. Thereafter, a formula to calculate the residual stress is given so that the residual stress can be easily evaluated from the deflection of the rotating beam. A variety of optimized micro-rotating-structures were then designed and fabricated to verify the FEM results. Residual stresses in both silicon nitride and polysilicon thin films were determined by this technique and compared with measurements by the wafer-curvature method. The two methods lead to comparable results. In addition, the micro-rotating-structures have the ability to measure spatially and locally a large range of residual tensile or compressive stresses.

Original languageEnglish (US)
Pages (from-to)97-105
Number of pages9
JournalThin Solid Films
Volume335
Issue number1-2
DOIs
StatePublished - Nov 19 1998
Externally publishedYes

Keywords

  • Micro-rotating-structures
  • Residual stresses

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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