Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs

S. H. Park, J. F. Morhange, A. D. Jeffery, R. A. Morgan, A. Chavez-Pirson, H. M. Gibbs, S. W. Koch, N. Peyghambarian, M. Derstine, A. C. Gossard, J. H. English, W. Weigmann

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Abstract

We present a systematic study of the dependence of the optical nonlinearities on quantum well thickness for GaAs/AlGaAs multiple quantum wells (MQW's) at room temperature and compare them with bulk GaAs. The maximum change in the refractive index is greatest for the MQW's with the smallest well size and decreases with increasing well size, reaching a minimum for bulk GaAs. The maximum index change per photoexcited carrier increases by a factor of 3 as the well size decreases from bulk to 76 Å MQW.

Original languageEnglish (US)
Pages (from-to)1201-1203
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number15
DOIs
StatePublished - Dec 1 1988

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Park, S. H., Morhange, J. F., Jeffery, A. D., Morgan, R. A., Chavez-Pirson, A., Gibbs, H. M., Koch, S. W., Peyghambarian, N., Derstine, M., Gossard, A. C., English, J. H., & Weigmann, W. (1988). Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs. Applied Physics Letters, 52(15), 1201-1203. https://doi.org/10.1063/1.99157