Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs

S. H. Park, J. F. Morhange, A. D. Jeffery, R. A. Morgan, A. Chavez-Pirson, H. M. Gibbs, Stephan W Koch, Nasser N Peyghambarian, M. Derstine, A. C. Gossard, J. H. English, W. Weigmann

Research output: Contribution to journalArticle

85 Citations (Scopus)

Abstract

We present a systematic study of the dependence of the optical nonlinearities on quantum well thickness for GaAs/AlGaAs multiple quantum wells (MQW's) at room temperature and compare them with bulk GaAs. The maximum change in the refractive index is greatest for the MQW's with the smallest well size and decreases with increasing well size, reaching a minimum for bulk GaAs. The maximum index change per photoexcited carrier increases by a factor of 3 as the well size decreases from bulk to 76 Å MQW.

Original languageEnglish (US)
Pages (from-to)1201-1203
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number15
DOIs
StatePublished - 1988

Fingerprint

aluminum gallium arsenides
nonlinearity
quantum wells
room temperature
refractivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Park, S. H., Morhange, J. F., Jeffery, A. D., Morgan, R. A., Chavez-Pirson, A., Gibbs, H. M., ... Weigmann, W. (1988). Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs. Applied Physics Letters, 52(15), 1201-1203. https://doi.org/10.1063/1.99157

Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs. / Park, S. H.; Morhange, J. F.; Jeffery, A. D.; Morgan, R. A.; Chavez-Pirson, A.; Gibbs, H. M.; Koch, Stephan W; Peyghambarian, Nasser N; Derstine, M.; Gossard, A. C.; English, J. H.; Weigmann, W.

In: Applied Physics Letters, Vol. 52, No. 15, 1988, p. 1201-1203.

Research output: Contribution to journalArticle

Park, SH, Morhange, JF, Jeffery, AD, Morgan, RA, Chavez-Pirson, A, Gibbs, HM, Koch, SW, Peyghambarian, NN, Derstine, M, Gossard, AC, English, JH & Weigmann, W 1988, 'Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs', Applied Physics Letters, vol. 52, no. 15, pp. 1201-1203. https://doi.org/10.1063/1.99157
Park, S. H. ; Morhange, J. F. ; Jeffery, A. D. ; Morgan, R. A. ; Chavez-Pirson, A. ; Gibbs, H. M. ; Koch, Stephan W ; Peyghambarian, Nasser N ; Derstine, M. ; Gossard, A. C. ; English, J. H. ; Weigmann, W. / Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs. In: Applied Physics Letters. 1988 ; Vol. 52, No. 15. pp. 1201-1203.
@article{a0e3d11165554bceb81ab59680ecfa4c,
title = "Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs",
abstract = "We present a systematic study of the dependence of the optical nonlinearities on quantum well thickness for GaAs/AlGaAs multiple quantum wells (MQW's) at room temperature and compare them with bulk GaAs. The maximum change in the refractive index is greatest for the MQW's with the smallest well size and decreases with increasing well size, reaching a minimum for bulk GaAs. The maximum index change per photoexcited carrier increases by a factor of 3 as the well size decreases from bulk to 76 {\AA} MQW.",
author = "Park, {S. H.} and Morhange, {J. F.} and Jeffery, {A. D.} and Morgan, {R. A.} and A. Chavez-Pirson and Gibbs, {H. M.} and Koch, {Stephan W} and Peyghambarian, {Nasser N} and M. Derstine and Gossard, {A. C.} and English, {J. H.} and W. Weigmann",
year = "1988",
doi = "10.1063/1.99157",
language = "English (US)",
volume = "52",
pages = "1201--1203",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

TY - JOUR

T1 - Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs

AU - Park, S. H.

AU - Morhange, J. F.

AU - Jeffery, A. D.

AU - Morgan, R. A.

AU - Chavez-Pirson, A.

AU - Gibbs, H. M.

AU - Koch, Stephan W

AU - Peyghambarian, Nasser N

AU - Derstine, M.

AU - Gossard, A. C.

AU - English, J. H.

AU - Weigmann, W.

PY - 1988

Y1 - 1988

N2 - We present a systematic study of the dependence of the optical nonlinearities on quantum well thickness for GaAs/AlGaAs multiple quantum wells (MQW's) at room temperature and compare them with bulk GaAs. The maximum change in the refractive index is greatest for the MQW's with the smallest well size and decreases with increasing well size, reaching a minimum for bulk GaAs. The maximum index change per photoexcited carrier increases by a factor of 3 as the well size decreases from bulk to 76 Å MQW.

AB - We present a systematic study of the dependence of the optical nonlinearities on quantum well thickness for GaAs/AlGaAs multiple quantum wells (MQW's) at room temperature and compare them with bulk GaAs. The maximum change in the refractive index is greatest for the MQW's with the smallest well size and decreases with increasing well size, reaching a minimum for bulk GaAs. The maximum index change per photoexcited carrier increases by a factor of 3 as the well size decreases from bulk to 76 Å MQW.

UR - http://www.scopus.com/inward/record.url?scp=0038721016&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038721016&partnerID=8YFLogxK

U2 - 10.1063/1.99157

DO - 10.1063/1.99157

M3 - Article

AN - SCOPUS:0038721016

VL - 52

SP - 1201

EP - 1203

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

ER -