Megasonic metrology for enhanced process development

S. Kumari, Manish K Keswani, M. Beck, E. Liebscher, T. Liang, Pierre A Deymier, Srini Raghavan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

Acoustic cavitation is known to be a primary source of both cleaning and damage of wafers during their megasonic processing. Understanding the response of process fluids to variables like acoustic power recipe and dissolved gases is an important first step in achieving damage-free megasonic cleaning of wafers. This paper reports the development of a portable, UV light tight, cavitation threshold (CT) cell to measure sonoluminescence (SL) signal arising from cavitation. The closed cell, integrated with a gas sensor and contactor, allows SL measurements under very controlled conditions. Using the CT cell the effect of the concentration of dissolved O2, CO2 and air on SL signal has been investigated. Results show that SL varies linearly with dissolved O2 concentration while CO2 is found to be incapable of supporting SL. This study also demonstrates a novel method for precise control of SL through addition of an O2 scavenger with fast O2 removal kinetics.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages295-302
Number of pages8
Volume25
Edition5
DOIs
Publication statusPublished - 2009
Event11th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 216th ECS Meeting - Vienna, Austria
Duration: Oct 4 2009Oct 9 2009

Other

Other11th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 216th ECS Meeting
CountryAustria
CityVienna
Period10/4/0910/9/09

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kumari, S., Keswani, M. K., Beck, M., Liebscher, E., Liang, T., Deymier, P. A., & Raghavan, S. (2009). Megasonic metrology for enhanced process development. In ECS Transactions (5 ed., Vol. 25, pp. 295-302) https://doi.org/10.1149/1.3202666