Memory effects in the momentum orientation relaxation of optically excited plasmas in semiconductors

R. Binder, H. S. Kohler, M. Bonitz

Research output: Contribution to conferencePaper

Abstract

In the study of memory effects in the momentum orientation relaxation, the theoretical basis of analysis are the equations of motion for the the full two-time one-particle Green's function g < (k, t1, t2) within the screened Hartree-Fock approximation. This Green's function reduces to the distribution function of the charge carriers as function of momentum k and time t in the equal time limit: f(k, t) = -iℏg < (qq, t, t). The numerical solution incorporates full correlation effects because it is based on an time integration in the two-dimensional t1 - t2 plane. Of course, one can apply certain additional approximations such as the Markov approximation to reduce the equation of motion to the conventional Boltzmann equation. The comparison of the results with and without such additional approximations yields important information about charge-carrier correlation contributions, memory effects, and nonkinetic energy preserving processes.

Original languageEnglish (US)
Pages154-155
Number of pages2
StatePublished - Jan 1 1996
EventProceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS - Anaheim, CA, USA
Duration: Jun 2 1996Jun 7 1996

Other

OtherProceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS
CityAnaheim, CA, USA
Period6/2/966/7/96

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Binder, R., Kohler, H. S., & Bonitz, M. (1996). Memory effects in the momentum orientation relaxation of optically excited plasmas in semiconductors. 154-155. Paper presented at Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS, Anaheim, CA, USA, .