Memory effects in the momentum orientation relaxation of optically excited plasmas in semiconductors

Rudolf Binder, H. S. Kohler, M. Bonitz

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

In the study of memory effects in the momentum orientation relaxation, the theoretical basis of analysis are the equations of motion for the the full two-time one-particle Green's function g < (k, t1, t2) within the screened Hartree-Fock approximation. This Green's function reduces to the distribution function of the charge carriers as function of momentum k and time t in the equal time limit: f(k, t) = -iℏg < (qq, t, t). The numerical solution incorporates full correlation effects because it is based on an time integration in the two-dimensional t1 - t2 plane. Of course, one can apply certain additional approximations such as the Markov approximation to reduce the equation of motion to the conventional Boltzmann equation. The comparison of the results with and without such additional approximations yields important information about charge-carrier correlation contributions, memory effects, and nonkinetic energy preserving processes.

Original languageEnglish (US)
Title of host publicationConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
PublisherIEEE
Pages154-155
Number of pages2
Volume9
StatePublished - 1996
EventProceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS - Anaheim, CA, USA
Duration: Jun 2 1996Jun 7 1996

Other

OtherProceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS
CityAnaheim, CA, USA
Period6/2/966/7/96

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momentum
charge carriers
equations of motion
Green's functions
approximation
Hartree approximation
preserving
distribution functions
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Binder, R., Kohler, H. S., & Bonitz, M. (1996). Memory effects in the momentum orientation relaxation of optically excited plasmas in semiconductors. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series (Vol. 9, pp. 154-155). IEEE.

Memory effects in the momentum orientation relaxation of optically excited plasmas in semiconductors. / Binder, Rudolf; Kohler, H. S.; Bonitz, M.

Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. Vol. 9 IEEE, 1996. p. 154-155.

Research output: Chapter in Book/Report/Conference proceedingChapter

Binder, R, Kohler, HS & Bonitz, M 1996, Memory effects in the momentum orientation relaxation of optically excited plasmas in semiconductors. in Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. vol. 9, IEEE, pp. 154-155, Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS, Anaheim, CA, USA, 6/2/96.
Binder R, Kohler HS, Bonitz M. Memory effects in the momentum orientation relaxation of optically excited plasmas in semiconductors. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. Vol. 9. IEEE. 1996. p. 154-155
Binder, Rudolf ; Kohler, H. S. ; Bonitz, M. / Memory effects in the momentum orientation relaxation of optically excited plasmas in semiconductors. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. Vol. 9 IEEE, 1996. pp. 154-155
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