Metal Based Nonvolatile Field-Effect Transistors

Chong Bi, Meng Xu, Hamid Almasi, Macus Rosales, Weigang Wang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The reduction of metals from their oxides through solid electrochemical reactions usually requires a high temperature above 800 °C and a specially designed electrochemical structure. It is demonstrated that, in a simple field-effect transistor (FET) structure, the redox reaction between Co metal and CoOx is reversible under a small electric field and can be achieved at a moderate temperature below 200 °C. The FETs functioning through the reversible redox reaction show nonvolatile behavior and a high on/off ratio of about 105. Moreover, the FETs show a threshold resistance switching behavior at high resistance states, but with opposite switching directions compared to normal metal/oxide/metal structures. The electric field induced metal-oxide transition may also be used for other energy storage applications.

Original languageEnglish (US)
Pages (from-to)3490-3495
Number of pages6
JournalAdvanced Functional Materials
Volume26
Issue number20
DOIs
StatePublished - May 24 2016

Fingerprint

Field effect transistors
field effect transistors
Metals
metal oxides
Oxides
metals
Redox reactions
electric fields
high resistance
energy storage
Electric fields
thresholds
oxides
Energy storage
Temperature
temperature

Keywords

  • metal-oxide transition
  • nonvolatile transistors
  • redox reaction
  • resistive memory
  • solid electrochemical reactions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Condensed Matter Physics
  • Electrochemistry

Cite this

Metal Based Nonvolatile Field-Effect Transistors. / Bi, Chong; Xu, Meng; Almasi, Hamid; Rosales, Macus; Wang, Weigang.

In: Advanced Functional Materials, Vol. 26, No. 20, 24.05.2016, p. 3490-3495.

Research output: Contribution to journalArticle

Bi, Chong ; Xu, Meng ; Almasi, Hamid ; Rosales, Macus ; Wang, Weigang. / Metal Based Nonvolatile Field-Effect Transistors. In: Advanced Functional Materials. 2016 ; Vol. 26, No. 20. pp. 3490-3495.
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