Metal Based Nonvolatile Field-Effect Transistors

Chong Bi, Meng Xu, Hamid Almasi, Macus Rosales, Weigang Wang

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The reduction of metals from their oxides through solid electrochemical reactions usually requires a high temperature above 800 °C and a specially designed electrochemical structure. It is demonstrated that, in a simple field-effect transistor (FET) structure, the redox reaction between Co metal and CoOx is reversible under a small electric field and can be achieved at a moderate temperature below 200 °C. The FETs functioning through the reversible redox reaction show nonvolatile behavior and a high on/off ratio of about 105. Moreover, the FETs show a threshold resistance switching behavior at high resistance states, but with opposite switching directions compared to normal metal/oxide/metal structures. The electric field induced metal-oxide transition may also be used for other energy storage applications.

Original languageEnglish (US)
Pages (from-to)3490-3495
Number of pages6
JournalAdvanced Functional Materials
Volume26
Issue number20
DOIs
StatePublished - May 24 2016

Keywords

  • metal-oxide transition
  • nonvolatile transistors
  • redox reaction
  • resistive memory
  • solid electrochemical reactions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Condensed Matter Physics
  • Electrochemistry

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