Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics

Mingxiang Wang, Wan Lap Yeung, Yitshak Zohar, Man Wong

Research output: Contribution to conferencePaper

Abstract

It is determined that for metal-induced laterally crystallized (MILC) polycrystalline silicon (poly-Si), the mechanical and etch properties compare favorably with and the sensing and electrical properties are better than those of conventional low-pressure chemical vapor deposited (LPCVD) poly-Si. The etching characteristics of MILC poly-Si in tetra-methyl ammonium hydroxide (TMAH) solution have been studied, A unified model based on preferential grain boundary (GB) etching has been proposed to explain the etching behavior of poly-Si in TMAH.

Original languageEnglish (US)
Pages2919-2923
Number of pages5
StatePublished - Dec 1 2001
Externally publishedYes
Event2001 ASME International Mechanical Engineering Congress and Exposition - New York, NY, United States
Duration: Nov 11 2001Nov 16 2001

Other

Other2001 ASME International Mechanical Engineering Congress and Exposition
CountryUnited States
CityNew York, NY
Period11/11/0111/16/01

ASJC Scopus subject areas

  • Engineering(all)

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    Wang, M., Yeung, W. L., Zohar, Y., & Wong, M. (2001). Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics. 2919-2923. Paper presented at 2001 ASME International Mechanical Engineering Congress and Exposition, New York, NY, United States.