Abstract
A novel metal-induced lateral crystallization (MILC) technique, involving a low temperature crystallization step followed by a high temperature recrystallization step, has been applied to the formation of polycrystalline silicon (poly-Si) with enhanced material characteristics. A range of devices, including piezo-resistors, thermisters, resistors and thin- film transistors, has been fabricated both on MILC and regular low-pressure chemical vapor deposited (LPCVD) poly-Si. Compared to the latter, MILC poly-Si leads to much improved device performance. The piezo-resistive gauge factor of MILC poly-Si is at least double that of LPCVD poly-Si, with a maximum value of 60 measured. Higher mobility, steeper subthreshold slope, lower threshold voltage, and higher on-off current ratio have been obtained for thin-film transistors realized on MILC poly-Si that those realized on LPCVD poly-Si. A variety of sensing and electronic devices based on MILC poly-Si can be simultaneously realized, thus making MILC an enabling technology for integrated silicon sensor applications.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 794-800 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 48 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 2001 |
| Externally published | Yes |
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Keywords
- Metal-induced crystallization
- Piezo-resistance
- Polycrystalline silicon
- Sensors
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Metal-induced laterally crystallized polycrystalline silicon for integrated sensor applications. / Wang, Mingxiang; Meng, Zhiguo; Zohar, Yitshak; Wong, Man.
In: IEEE Transactions on Electron Devices, Vol. 48, No. 4, 04.2001, p. 794-800.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Metal-induced laterally crystallized polycrystalline silicon for integrated sensor applications
AU - Wang, Mingxiang
AU - Meng, Zhiguo
AU - Zohar, Yitshak
AU - Wong, Man
PY - 2001/4
Y1 - 2001/4
N2 - A novel metal-induced lateral crystallization (MILC) technique, involving a low temperature crystallization step followed by a high temperature recrystallization step, has been applied to the formation of polycrystalline silicon (poly-Si) with enhanced material characteristics. A range of devices, including piezo-resistors, thermisters, resistors and thin- film transistors, has been fabricated both on MILC and regular low-pressure chemical vapor deposited (LPCVD) poly-Si. Compared to the latter, MILC poly-Si leads to much improved device performance. The piezo-resistive gauge factor of MILC poly-Si is at least double that of LPCVD poly-Si, with a maximum value of 60 measured. Higher mobility, steeper subthreshold slope, lower threshold voltage, and higher on-off current ratio have been obtained for thin-film transistors realized on MILC poly-Si that those realized on LPCVD poly-Si. A variety of sensing and electronic devices based on MILC poly-Si can be simultaneously realized, thus making MILC an enabling technology for integrated silicon sensor applications.
AB - A novel metal-induced lateral crystallization (MILC) technique, involving a low temperature crystallization step followed by a high temperature recrystallization step, has been applied to the formation of polycrystalline silicon (poly-Si) with enhanced material characteristics. A range of devices, including piezo-resistors, thermisters, resistors and thin- film transistors, has been fabricated both on MILC and regular low-pressure chemical vapor deposited (LPCVD) poly-Si. Compared to the latter, MILC poly-Si leads to much improved device performance. The piezo-resistive gauge factor of MILC poly-Si is at least double that of LPCVD poly-Si, with a maximum value of 60 measured. Higher mobility, steeper subthreshold slope, lower threshold voltage, and higher on-off current ratio have been obtained for thin-film transistors realized on MILC poly-Si that those realized on LPCVD poly-Si. A variety of sensing and electronic devices based on MILC poly-Si can be simultaneously realized, thus making MILC an enabling technology for integrated silicon sensor applications.
KW - Metal-induced crystallization
KW - Piezo-resistance
KW - Polycrystalline silicon
KW - Sensors
UR - http://www.scopus.com/inward/record.url?scp=0035309126&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035309126&partnerID=8YFLogxK
U2 - 10.1109/16.915728
DO - 10.1109/16.915728
M3 - Article
AN - SCOPUS:0035309126
VL - 48
SP - 794
EP - 800
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 4
ER -