TY - JOUR
T1 - Metal-induced laterally crystallized polycrystalline silicon for integrated sensor applications
AU - Wang, Mingxiang
AU - Meng, Zhiguo
AU - Zohar, Yitshak
AU - Wong, Man
N1 - Funding Information:
Manuscript received February 17, 2000; revised May 19, 2000. This work was supported by a grant from the Research Grants Council of Hong Kong. The review of this paper was arranged by Editor K. Najafi. M. Wang, Z. Meng, and M. Wong are with the Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (e-mail: milc@ieee.org). Y. Zohar is with the Department of Mechanical Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong. Publisher Item Identifier S 0018-9383(01)00783-3.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2001/4
Y1 - 2001/4
N2 - A novel metal-induced lateral crystallization (MILC) technique, involving a low temperature crystallization step followed by a high temperature recrystallization step, has been applied to the formation of polycrystalline silicon (poly-Si) with enhanced material characteristics. A range of devices, including piezo-resistors, thermisters, resistors and thin- film transistors, has been fabricated both on MILC and regular low-pressure chemical vapor deposited (LPCVD) poly-Si. Compared to the latter, MILC poly-Si leads to much improved device performance. The piezo-resistive gauge factor of MILC poly-Si is at least double that of LPCVD poly-Si, with a maximum value of 60 measured. Higher mobility, steeper subthreshold slope, lower threshold voltage, and higher on-off current ratio have been obtained for thin-film transistors realized on MILC poly-Si that those realized on LPCVD poly-Si. A variety of sensing and electronic devices based on MILC poly-Si can be simultaneously realized, thus making MILC an enabling technology for integrated silicon sensor applications.
AB - A novel metal-induced lateral crystallization (MILC) technique, involving a low temperature crystallization step followed by a high temperature recrystallization step, has been applied to the formation of polycrystalline silicon (poly-Si) with enhanced material characteristics. A range of devices, including piezo-resistors, thermisters, resistors and thin- film transistors, has been fabricated both on MILC and regular low-pressure chemical vapor deposited (LPCVD) poly-Si. Compared to the latter, MILC poly-Si leads to much improved device performance. The piezo-resistive gauge factor of MILC poly-Si is at least double that of LPCVD poly-Si, with a maximum value of 60 measured. Higher mobility, steeper subthreshold slope, lower threshold voltage, and higher on-off current ratio have been obtained for thin-film transistors realized on MILC poly-Si that those realized on LPCVD poly-Si. A variety of sensing and electronic devices based on MILC poly-Si can be simultaneously realized, thus making MILC an enabling technology for integrated silicon sensor applications.
KW - Metal-induced crystallization
KW - Piezo-resistance
KW - Polycrystalline silicon
KW - Sensors
UR - http://www.scopus.com/inward/record.url?scp=0035309126&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035309126&partnerID=8YFLogxK
U2 - 10.1109/16.915728
DO - 10.1109/16.915728
M3 - Article
AN - SCOPUS:0035309126
VL - 48
SP - 794
EP - 800
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 4
ER -