Abstract
A novel metal-induced lateral crystallization (MILC) technique, involving a low temperature crystallization step followed by a high temperature recrystallization step, has been applied to the formation of polycrystalline silicon (poly-Si) with enhanced material characteristics. A range of devices, including piezo-resistors, thermisters, resistors and thin- film transistors, has been fabricated both on MILC and regular low-pressure chemical vapor deposited (LPCVD) poly-Si. Compared to the latter, MILC poly-Si leads to much improved device performance. The piezo-resistive gauge factor of MILC poly-Si is at least double that of LPCVD poly-Si, with a maximum value of 60 measured. Higher mobility, steeper subthreshold slope, lower threshold voltage, and higher on-off current ratio have been obtained for thin-film transistors realized on MILC poly-Si that those realized on LPCVD poly-Si. A variety of sensing and electronic devices based on MILC poly-Si can be simultaneously realized, thus making MILC an enabling technology for integrated silicon sensor applications.
Original language | English (US) |
---|---|
Pages (from-to) | 794-800 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 48 |
Issue number | 4 |
DOIs | |
State | Published - Apr 1 2001 |
Externally published | Yes |
Keywords
- Metal-induced crystallization
- Piezo-resistance
- Polycrystalline silicon
- Sensors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering