Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics

Mingxiang Wang, Wan Lap Yeung, Yitshak Zohar, Man Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

It is determined that for metal-induced laterally crystallized (MILC) polycrystalline silicon (poly-Si), the mechanical and etch properties compare favorably with and the sensing and electrical properties are better than those of conventional low-pressure chemical vapor deposited (LPCVD) poly-Si. The etching characteristics of MILC poly-Si in tetra-methyl ammonium hydroxide (TMAH) solution have been studied. A unified model based on preferential grain boundary (GB) etching has been proposed to explain the etching behavior of poly-Si in TMAH.

Original languageEnglish (US)
Title of host publicationAmerican Society of Mechanical Engineers, Micro-Electromechanical Systems Division Publication (MEMS)
EditorsA.L. Lee, J. Simon, K. Breuer, S. Chen, R.S. Keynton, A. Malshe, J.-I. Mou, M. Dunn
Pages345-349
Number of pages5
Volume3
StatePublished - 2001
Externally publishedYes
Event2001 ASME International Mechanical Engineering Congress and Exposition - New York, NY, United States
Duration: Nov 11 2001Nov 16 2001

Other

Other2001 ASME International Mechanical Engineering Congress and Exposition
CountryUnited States
CityNew York, NY
Period11/11/0111/16/01

Fingerprint

Polysilicon
Ammonium hydroxide
Etching
Metals
Grain boundaries
Electric properties
Vapors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Wang, M., Yeung, W. L., Zohar, Y., & Wong, M. (2001). Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics. In A. L. Lee, J. Simon, K. Breuer, S. Chen, R. S. Keynton, A. Malshe, J-I. Mou, ... M. Dunn (Eds.), American Society of Mechanical Engineers, Micro-Electromechanical Systems Division Publication (MEMS) (Vol. 3, pp. 345-349)

Metal-induced laterally crystallized polycrystalline silicon for micro-systems : Mechanical and etching characteristics. / Wang, Mingxiang; Yeung, Wan Lap; Zohar, Yitshak; Wong, Man.

American Society of Mechanical Engineers, Micro-Electromechanical Systems Division Publication (MEMS). ed. / A.L. Lee; J. Simon; K. Breuer; S. Chen; R.S. Keynton; A. Malshe; J.-I. Mou; M. Dunn. Vol. 3 2001. p. 345-349.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, M, Yeung, WL, Zohar, Y & Wong, M 2001, Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics. in AL Lee, J Simon, K Breuer, S Chen, RS Keynton, A Malshe, J-I Mou & M Dunn (eds), American Society of Mechanical Engineers, Micro-Electromechanical Systems Division Publication (MEMS). vol. 3, pp. 345-349, 2001 ASME International Mechanical Engineering Congress and Exposition, New York, NY, United States, 11/11/01.
Wang M, Yeung WL, Zohar Y, Wong M. Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics. In Lee AL, Simon J, Breuer K, Chen S, Keynton RS, Malshe A, Mou J-I, Dunn M, editors, American Society of Mechanical Engineers, Micro-Electromechanical Systems Division Publication (MEMS). Vol. 3. 2001. p. 345-349
Wang, Mingxiang ; Yeung, Wan Lap ; Zohar, Yitshak ; Wong, Man. / Metal-induced laterally crystallized polycrystalline silicon for micro-systems : Mechanical and etching characteristics. American Society of Mechanical Engineers, Micro-Electromechanical Systems Division Publication (MEMS). editor / A.L. Lee ; J. Simon ; K. Breuer ; S. Chen ; R.S. Keynton ; A. Malshe ; J.-I. Mou ; M. Dunn. Vol. 3 2001. pp. 345-349
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