Method for determining the lubrication mechanism of post-ILD CMP brush scrubbing

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A method using spectral analysis of friction data is established to determine the tribological mechanism of post-interlevel dielectric (post-ILD) chemical mechanical planarization (CMP) brush scrubbing as a function of solution pH, pressure, and tool kinematics. Spectral analysis based on real-time raw friction data is used to quantify the total amount of mechanical interaction in the brush-fluid-wafer interface in terms of stick-slip phenomena. Friction force variance (2) criterion is established to determine the tribological mechanism during scrubbing, and compared to the classical method by constructing and interpreting Stribeck curves.

Original languageEnglish (US)
JournalElectrochemical and Solid-State Letters
Volume11
Issue number8
DOIs
StatePublished - 2008

Fingerprint

Chemical mechanical polishing
washing
brushes
Brushes
lubrication
Lubrication
friction
Friction
Spectrum analysis
spectrum analysis
Stick-slip
Kinematics
slip
kinematics
wafers
Fluids
fluids
curves
interactions

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

@article{bb70588fa9b44bf4b4398f928c2af449,
title = "Method for determining the lubrication mechanism of post-ILD CMP brush scrubbing",
abstract = "A method using spectral analysis of friction data is established to determine the tribological mechanism of post-interlevel dielectric (post-ILD) chemical mechanical planarization (CMP) brush scrubbing as a function of solution pH, pressure, and tool kinematics. Spectral analysis based on real-time raw friction data is used to quantify the total amount of mechanical interaction in the brush-fluid-wafer interface in terms of stick-slip phenomena. Friction force variance (2) criterion is established to determine the tribological mechanism during scrubbing, and compared to the classical method by constructing and interpreting Stribeck curves.",
author = "T. Sun and Ara Philipossian",
year = "2008",
doi = "10.1149/1.2929065",
language = "English (US)",
volume = "11",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "8",

}

TY - JOUR

T1 - Method for determining the lubrication mechanism of post-ILD CMP brush scrubbing

AU - Sun, T.

AU - Philipossian, Ara

PY - 2008

Y1 - 2008

N2 - A method using spectral analysis of friction data is established to determine the tribological mechanism of post-interlevel dielectric (post-ILD) chemical mechanical planarization (CMP) brush scrubbing as a function of solution pH, pressure, and tool kinematics. Spectral analysis based on real-time raw friction data is used to quantify the total amount of mechanical interaction in the brush-fluid-wafer interface in terms of stick-slip phenomena. Friction force variance (2) criterion is established to determine the tribological mechanism during scrubbing, and compared to the classical method by constructing and interpreting Stribeck curves.

AB - A method using spectral analysis of friction data is established to determine the tribological mechanism of post-interlevel dielectric (post-ILD) chemical mechanical planarization (CMP) brush scrubbing as a function of solution pH, pressure, and tool kinematics. Spectral analysis based on real-time raw friction data is used to quantify the total amount of mechanical interaction in the brush-fluid-wafer interface in terms of stick-slip phenomena. Friction force variance (2) criterion is established to determine the tribological mechanism during scrubbing, and compared to the classical method by constructing and interpreting Stribeck curves.

UR - http://www.scopus.com/inward/record.url?scp=45249103297&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45249103297&partnerID=8YFLogxK

U2 - 10.1149/1.2929065

DO - 10.1149/1.2929065

M3 - Article

AN - SCOPUS:45249103297

VL - 11

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 8

ER -