Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium

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Abstract

Fully microscopic many-body calculations are used to analyze the carrier dynamics in situations where a strong sub-picosecond pulse interacts with an inverted semiconductor quantum well. Electron-electron and electron-phonon scatterings are calculated on a second Born-Markov level. Intra-subband scatterings on a scale of tens of femtoseconds are shown to quickly re-fill the kinetic holes created in the carrier distributions during the pulse amplification. Even for sub-100 fs pulses, this significantly influences the pulse amplification as well as its spectral dependence. Interband scatterings on a few picosecond timescale limit the possibly achievable repetition rate in pulsed semiconductor lasers.

Original languageEnglish (US)
Article number151111
JournalApplied Physics Letters
Volume104
Issue number15
DOIs
StatePublished - 2014

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semiconductor lasers
pulses
scattering
electrons
picosecond pulses
repetition
pulsed lasers
quantum wells
kinetics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{4669a7313eb74e1991e3d6ec1e5080bc,
title = "Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium",
abstract = "Fully microscopic many-body calculations are used to analyze the carrier dynamics in situations where a strong sub-picosecond pulse interacts with an inverted semiconductor quantum well. Electron-electron and electron-phonon scatterings are calculated on a second Born-Markov level. Intra-subband scatterings on a scale of tens of femtoseconds are shown to quickly re-fill the kinetic holes created in the carrier distributions during the pulse amplification. Even for sub-100 fs pulses, this significantly influences the pulse amplification as well as its spectral dependence. Interband scatterings on a few picosecond timescale limit the possibly achievable repetition rate in pulsed semiconductor lasers.",
author = "Jorg Hader and Moloney, {Jerome V} and Koch, {Stephan W}",
year = "2014",
doi = "10.1063/1.4872316",
language = "English (US)",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

TY - JOUR

T1 - Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Koch, Stephan W

PY - 2014

Y1 - 2014

N2 - Fully microscopic many-body calculations are used to analyze the carrier dynamics in situations where a strong sub-picosecond pulse interacts with an inverted semiconductor quantum well. Electron-electron and electron-phonon scatterings are calculated on a second Born-Markov level. Intra-subband scatterings on a scale of tens of femtoseconds are shown to quickly re-fill the kinetic holes created in the carrier distributions during the pulse amplification. Even for sub-100 fs pulses, this significantly influences the pulse amplification as well as its spectral dependence. Interband scatterings on a few picosecond timescale limit the possibly achievable repetition rate in pulsed semiconductor lasers.

AB - Fully microscopic many-body calculations are used to analyze the carrier dynamics in situations where a strong sub-picosecond pulse interacts with an inverted semiconductor quantum well. Electron-electron and electron-phonon scatterings are calculated on a second Born-Markov level. Intra-subband scatterings on a scale of tens of femtoseconds are shown to quickly re-fill the kinetic holes created in the carrier distributions during the pulse amplification. Even for sub-100 fs pulses, this significantly influences the pulse amplification as well as its spectral dependence. Interband scatterings on a few picosecond timescale limit the possibly achievable repetition rate in pulsed semiconductor lasers.

UR - http://www.scopus.com/inward/record.url?scp=84899629481&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899629481&partnerID=8YFLogxK

U2 - 10.1063/1.4872316

DO - 10.1063/1.4872316

M3 - Article

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 151111

ER -