Microscopic description of luminescence in semiconductor microcavities

M. Kira, F. Jahnke, W. W. Ruehle, S. W. Koch, J. D. Berger, O. Lyngnes, G. Khitrova, H. M. Gibbs, S. Hallstein

Research output: Contribution to conferencePaper

Abstract

A full quantum analysis of the luminescence properties of semiconductor microcavities by studying both the field dynamics and the many-body system of carriers microscopically is presented. The field is quantized by introducing boson operators bq for each field mode having a wave vector q. The carrier system is treated at a microscopic level to describe the many body Coulomb effects. The luminescence properties are determined from the equations of motion. Transmission spectra are shown and computed by solving the polarization and wave equations for an incident field. The relative heights of two normal modes resonances behave differently in luminescence and transmission. Experimental results are in agreement with calculations.

Original languageEnglish (US)
Number of pages1
StatePublished - Jan 1 1997
EventProceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS - Baltimore, MD, USA
Duration: May 18 1997May 23 1997

Other

OtherProceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS
CityBaltimore, MD, USA
Period5/18/975/23/97

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Kira, M., Jahnke, F., Ruehle, W. W., Koch, S. W., Berger, J. D., Lyngnes, O., Khitrova, G., Gibbs, H. M., & Hallstein, S. (1997). Microscopic description of luminescence in semiconductor microcavities. Paper presented at Proceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS, Baltimore, MD, USA, .