Microscopic electroabsorption line shape analysis for Ga (AsSb) GaAs heterostructures

C. Bückers, G. Blume, A. Thränhardt, C. Schlichenmaier, P. J. Klar, G. Weiser, Stephan W Koch, Jorg Hader, Jerome V Moloney, T. J C Hosea, S. J. Sweeney, J. B. Wang, S. R. Johnson, Y. H. Zhang

Research output: Contribution to journalArticle

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Abstract

A series of Ga (AsSb) GaAs (AlGa) As samples with varying GaAs spacer width are studied by electric-field modulated absorption (EA) and reflectance spectroscopy and modeled using a microscopic theory. The analysis of the Franz-Keldysh oscillations of GaAs capping layer and of the quantum-confined Stark shift of the lowest quantum well (QW) transitions shows the strong inhomogeneity of the built-in electric field indicating that the field modulation due to an external bias voltage differs significantly for the various regions of the structures. The calculations demonstrate that the line shape of the EA spectra of these samples is extremely sensitive to the value of the small conduction band offset between GaAs and Ga (AsSb) as well as to the magnitude of the internal electric field changes caused by the external voltage modulation in the QW region. The EA spectra of the entire series of samples are modeled by the microscopic theory. The good agreement between experiment and theory allows us to extract the strength of the modulation of the built-in electric field in the QW region and to show that the band alignment between GaAs and Ga (AsSb) is of type II with a conduction band offset of approximately 40 meV.

Original languageEnglish (US)
Article number033118
JournalJournal of Applied Physics
Volume101
Issue number3
DOIs
StatePublished - 2007

Fingerprint

line shape
electric fields
quantum wells
modulation
conduction bands
absorption spectra
electric potential
algae
spacers
inhomogeneity
alignment
reflectance
oscillations
shift
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Bückers, C., Blume, G., Thränhardt, A., Schlichenmaier, C., Klar, P. J., Weiser, G., ... Zhang, Y. H. (2007). Microscopic electroabsorption line shape analysis for Ga (AsSb) GaAs heterostructures. Journal of Applied Physics, 101(3), [033118]. https://doi.org/10.1063/1.2433715

Microscopic electroabsorption line shape analysis for Ga (AsSb) GaAs heterostructures. / Bückers, C.; Blume, G.; Thränhardt, A.; Schlichenmaier, C.; Klar, P. J.; Weiser, G.; Koch, Stephan W; Hader, Jorg; Moloney, Jerome V; Hosea, T. J C; Sweeney, S. J.; Wang, J. B.; Johnson, S. R.; Zhang, Y. H.

In: Journal of Applied Physics, Vol. 101, No. 3, 033118, 2007.

Research output: Contribution to journalArticle

Bückers, C, Blume, G, Thränhardt, A, Schlichenmaier, C, Klar, PJ, Weiser, G, Koch, SW, Hader, J, Moloney, JV, Hosea, TJC, Sweeney, SJ, Wang, JB, Johnson, SR & Zhang, YH 2007, 'Microscopic electroabsorption line shape analysis for Ga (AsSb) GaAs heterostructures', Journal of Applied Physics, vol. 101, no. 3, 033118. https://doi.org/10.1063/1.2433715
Bückers C, Blume G, Thränhardt A, Schlichenmaier C, Klar PJ, Weiser G et al. Microscopic electroabsorption line shape analysis for Ga (AsSb) GaAs heterostructures. Journal of Applied Physics. 2007;101(3). 033118. https://doi.org/10.1063/1.2433715
Bückers, C. ; Blume, G. ; Thränhardt, A. ; Schlichenmaier, C. ; Klar, P. J. ; Weiser, G. ; Koch, Stephan W ; Hader, Jorg ; Moloney, Jerome V ; Hosea, T. J C ; Sweeney, S. J. ; Wang, J. B. ; Johnson, S. R. ; Zhang, Y. H. / Microscopic electroabsorption line shape analysis for Ga (AsSb) GaAs heterostructures. In: Journal of Applied Physics. 2007 ; Vol. 101, No. 3.
@article{3198d01c07b54080ba46f7fb638e1feb,
title = "Microscopic electroabsorption line shape analysis for Ga (AsSb) GaAs heterostructures",
abstract = "A series of Ga (AsSb) GaAs (AlGa) As samples with varying GaAs spacer width are studied by electric-field modulated absorption (EA) and reflectance spectroscopy and modeled using a microscopic theory. The analysis of the Franz-Keldysh oscillations of GaAs capping layer and of the quantum-confined Stark shift of the lowest quantum well (QW) transitions shows the strong inhomogeneity of the built-in electric field indicating that the field modulation due to an external bias voltage differs significantly for the various regions of the structures. The calculations demonstrate that the line shape of the EA spectra of these samples is extremely sensitive to the value of the small conduction band offset between GaAs and Ga (AsSb) as well as to the magnitude of the internal electric field changes caused by the external voltage modulation in the QW region. The EA spectra of the entire series of samples are modeled by the microscopic theory. The good agreement between experiment and theory allows us to extract the strength of the modulation of the built-in electric field in the QW region and to show that the band alignment between GaAs and Ga (AsSb) is of type II with a conduction band offset of approximately 40 meV.",
author = "C. B{\"u}ckers and G. Blume and A. Thr{\"a}nhardt and C. Schlichenmaier and Klar, {P. J.} and G. Weiser and Koch, {Stephan W} and Jorg Hader and Moloney, {Jerome V} and Hosea, {T. J C} and Sweeney, {S. J.} and Wang, {J. B.} and Johnson, {S. R.} and Zhang, {Y. H.}",
year = "2007",
doi = "10.1063/1.2433715",
language = "English (US)",
volume = "101",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Microscopic electroabsorption line shape analysis for Ga (AsSb) GaAs heterostructures

AU - Bückers, C.

AU - Blume, G.

AU - Thränhardt, A.

AU - Schlichenmaier, C.

AU - Klar, P. J.

AU - Weiser, G.

AU - Koch, Stephan W

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Hosea, T. J C

AU - Sweeney, S. J.

AU - Wang, J. B.

AU - Johnson, S. R.

AU - Zhang, Y. H.

PY - 2007

Y1 - 2007

N2 - A series of Ga (AsSb) GaAs (AlGa) As samples with varying GaAs spacer width are studied by electric-field modulated absorption (EA) and reflectance spectroscopy and modeled using a microscopic theory. The analysis of the Franz-Keldysh oscillations of GaAs capping layer and of the quantum-confined Stark shift of the lowest quantum well (QW) transitions shows the strong inhomogeneity of the built-in electric field indicating that the field modulation due to an external bias voltage differs significantly for the various regions of the structures. The calculations demonstrate that the line shape of the EA spectra of these samples is extremely sensitive to the value of the small conduction band offset between GaAs and Ga (AsSb) as well as to the magnitude of the internal electric field changes caused by the external voltage modulation in the QW region. The EA spectra of the entire series of samples are modeled by the microscopic theory. The good agreement between experiment and theory allows us to extract the strength of the modulation of the built-in electric field in the QW region and to show that the band alignment between GaAs and Ga (AsSb) is of type II with a conduction band offset of approximately 40 meV.

AB - A series of Ga (AsSb) GaAs (AlGa) As samples with varying GaAs spacer width are studied by electric-field modulated absorption (EA) and reflectance spectroscopy and modeled using a microscopic theory. The analysis of the Franz-Keldysh oscillations of GaAs capping layer and of the quantum-confined Stark shift of the lowest quantum well (QW) transitions shows the strong inhomogeneity of the built-in electric field indicating that the field modulation due to an external bias voltage differs significantly for the various regions of the structures. The calculations demonstrate that the line shape of the EA spectra of these samples is extremely sensitive to the value of the small conduction band offset between GaAs and Ga (AsSb) as well as to the magnitude of the internal electric field changes caused by the external voltage modulation in the QW region. The EA spectra of the entire series of samples are modeled by the microscopic theory. The good agreement between experiment and theory allows us to extract the strength of the modulation of the built-in electric field in the QW region and to show that the band alignment between GaAs and Ga (AsSb) is of type II with a conduction band offset of approximately 40 meV.

UR - http://www.scopus.com/inward/record.url?scp=33847195407&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847195407&partnerID=8YFLogxK

U2 - 10.1063/1.2433715

DO - 10.1063/1.2433715

M3 - Article

AN - SCOPUS:33847195407

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 033118

ER -