Microscopic evaluation of spontaneous emission- and Auger-processes in semiconductor lasers

Research output: Contribution to journalArticle

88 Citations (Scopus)

Abstract

A fully microscopic approach is used to compute the losses in semiconductor lasers due to spontaneous emission and Auger recombination. The model is based on the semiconductor-Bloch equations and generalized quantum-Boltzmann type scattering equations in the second Born-Markov approximation. As input the theory only needs the structural layout and fundamental bulk-bandstructure parameters. It is demonstrated that such a comprehensive model that calculates gain/ absorption, spontaneous emission and Auger processes on the same microscopic level can reliably predict these usually dominant loss processes. Examples of the results are compared to measurements on lasers in the 1.3-1.5 μm range demonstrating very good agreement without empirical fitting.

Original languageEnglish (US)
Pages (from-to)1217-1226
Number of pages10
JournalIEEE Journal of Quantum Electronics
Volume41
Issue number10
DOIs
StatePublished - Oct 2005

Fingerprint

Spontaneous emission
spontaneous emission
Semiconductor lasers
semiconductor lasers
evaluation
layouts
Scattering
Semiconductor materials
Lasers
approximation
scattering
lasers

Keywords

  • Auger recombination
  • Gain
  • GaInNAs
  • InGaAsP
  • Modeling
  • Quantum-well lasers
  • Spontaneous emission

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

@article{9e2c8f83d48f4d1bab33e485280b06bd,
title = "Microscopic evaluation of spontaneous emission- and Auger-processes in semiconductor lasers",
abstract = "A fully microscopic approach is used to compute the losses in semiconductor lasers due to spontaneous emission and Auger recombination. The model is based on the semiconductor-Bloch equations and generalized quantum-Boltzmann type scattering equations in the second Born-Markov approximation. As input the theory only needs the structural layout and fundamental bulk-bandstructure parameters. It is demonstrated that such a comprehensive model that calculates gain/ absorption, spontaneous emission and Auger processes on the same microscopic level can reliably predict these usually dominant loss processes. Examples of the results are compared to measurements on lasers in the 1.3-1.5 μm range demonstrating very good agreement without empirical fitting.",
keywords = "Auger recombination, Gain, GaInNAs, InGaAsP, Modeling, Quantum-well lasers, Spontaneous emission",
author = "Jorg Hader and Moloney, {Jerome V} and Koch, {Stephan W}",
year = "2005",
month = "10",
doi = "10.1109/JQE.2005.854127",
language = "English (US)",
volume = "41",
pages = "1217--1226",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

TY - JOUR

T1 - Microscopic evaluation of spontaneous emission- and Auger-processes in semiconductor lasers

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Koch, Stephan W

PY - 2005/10

Y1 - 2005/10

N2 - A fully microscopic approach is used to compute the losses in semiconductor lasers due to spontaneous emission and Auger recombination. The model is based on the semiconductor-Bloch equations and generalized quantum-Boltzmann type scattering equations in the second Born-Markov approximation. As input the theory only needs the structural layout and fundamental bulk-bandstructure parameters. It is demonstrated that such a comprehensive model that calculates gain/ absorption, spontaneous emission and Auger processes on the same microscopic level can reliably predict these usually dominant loss processes. Examples of the results are compared to measurements on lasers in the 1.3-1.5 μm range demonstrating very good agreement without empirical fitting.

AB - A fully microscopic approach is used to compute the losses in semiconductor lasers due to spontaneous emission and Auger recombination. The model is based on the semiconductor-Bloch equations and generalized quantum-Boltzmann type scattering equations in the second Born-Markov approximation. As input the theory only needs the structural layout and fundamental bulk-bandstructure parameters. It is demonstrated that such a comprehensive model that calculates gain/ absorption, spontaneous emission and Auger processes on the same microscopic level can reliably predict these usually dominant loss processes. Examples of the results are compared to measurements on lasers in the 1.3-1.5 μm range demonstrating very good agreement without empirical fitting.

KW - Auger recombination

KW - Gain

KW - GaInNAs

KW - InGaAsP

KW - Modeling

KW - Quantum-well lasers

KW - Spontaneous emission

UR - http://www.scopus.com/inward/record.url?scp=26844529293&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=26844529293&partnerID=8YFLogxK

U2 - 10.1109/JQE.2005.854127

DO - 10.1109/JQE.2005.854127

M3 - Article

VL - 41

SP - 1217

EP - 1226

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 10

ER -