Microscopic evaluation of spontaneous emission- and Auger-processes in semiconductor lasers

Research output: Contribution to journalArticle

88 Scopus citations

Abstract

A fully microscopic approach is used to compute the losses in semiconductor lasers due to spontaneous emission and Auger recombination. The model is based on the semiconductor-Bloch equations and generalized quantum-Boltzmann type scattering equations in the second Born-Markov approximation. As input the theory only needs the structural layout and fundamental bulk-bandstructure parameters. It is demonstrated that such a comprehensive model that calculates gain/ absorption, spontaneous emission and Auger processes on the same microscopic level can reliably predict these usually dominant loss processes. Examples of the results are compared to measurements on lasers in the 1.3-1.5 μm range demonstrating very good agreement without empirical fitting.

Original languageEnglish (US)
Pages (from-to)1217-1226
Number of pages10
JournalIEEE Journal of Quantum Electronics
Volume41
Issue number10
DOIs
StatePublished - Oct 1 2005

Keywords

  • Auger recombination
  • GaInNAs
  • Gain
  • InGaAsP
  • Modeling
  • Quantum-well lasers
  • Spontaneous emission

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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