Microscopic gain theory for group III nitride semiconductor quantum wells

A. Girndt, F. Jahnke, S. W. Koch, W. W. Chow

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The gain/absorption properties of III-V nitride quantum well systems are computed microscopically using multi-band semiconductor Bloch equations. Lineshape and dephasing are treated at the level of quantum kinetic theory in second Born approximation in the Markovian limit. The compositional and structural properties of the quantum wells are modelled using k · p theory. Numerical results are presented for the example of several InGaN/AIGaN structures.

Original languageEnglish (US)
Pages (from-to)174-179
Number of pages6
JournalMaterials Science and Engineering B
Issue number1-3
StatePublished - Dec 18 1997


  • Carrier-carrier interaction
  • Optical properties
  • Semiconductors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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