Microscopic gain theory for group III nitride semiconductor quantum wells

A. Girndt, F. Jahnke, Stephan W Koch, W. W. Chow

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The gain/absorption properties of III-V nitride quantum well systems are computed microscopically using multi-band semiconductor Bloch equations. Lineshape and dephasing are treated at the level of quantum kinetic theory in second Born approximation in the Markovian limit. The compositional and structural properties of the quantum wells are modelled using k · p theory. Numerical results are presented for the example of several InGaN/AIGaN structures.

Original languageEnglish (US)
Pages (from-to)174-179
Number of pages6
JournalMaterials Science and Engineering B
Volume50
Issue number1-3
StatePublished - Dec 18 1997
Externally publishedYes

Fingerprint

Nitrides
Semiconductor quantum wells
nitrides
quantum wells
Born approximation
Kinetic theory
kinetic theory
Structural properties
Semiconductor materials

Keywords

  • Carrier-carrier interaction
  • Optical properties
  • Semiconductors

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Microscopic gain theory for group III nitride semiconductor quantum wells. / Girndt, A.; Jahnke, F.; Koch, Stephan W; Chow, W. W.

In: Materials Science and Engineering B, Vol. 50, No. 1-3, 18.12.1997, p. 174-179.

Research output: Contribution to journalArticle

Girndt, A. ; Jahnke, F. ; Koch, Stephan W ; Chow, W. W. / Microscopic gain theory for group III nitride semiconductor quantum wells. In: Materials Science and Engineering B. 1997 ; Vol. 50, No. 1-3. pp. 174-179.
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