Microscopic many-body investigation of the efficiency droop in GaN based light emitting devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Fully microscopic models for the calculation of the carrier dynamics and resulting optical response are used to investigate the validity of various models that have been suggested as the cause for the efficiency droop in GaN-based devices. Models based on internal piezoelectric electric fields, carrier localization, Auger and density-activated defect recombination are analysed. In particular, the models are used to simulate aspects of a recent experiment in which green emitting quantum wells were pumped resonantly and emission from adjacent ultra-violet emitting wells was attributed to carrier redistributions due to Auger processes. It is shown that the UV emission can be explained as a direct result of the optical excitation without involving Auger processes.

Original languageEnglish (US)
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XVIII
PublisherSPIE
ISBN (Print)9780819499165
DOIs
StatePublished - Jan 1 2014
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII - San Francisco, CA, United States
Duration: Feb 4 2014Feb 6 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9003
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII
CountryUnited States
CitySan Francisco, CA
Period2/4/142/6/14

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Keywords

  • Auger
  • GaN
  • defect recombination
  • efficiency droop
  • many-body theory
  • nonequilibrium effects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Hader, J., Moloney, J. V., & Koch, S. W. (2014). Microscopic many-body investigation of the efficiency droop in GaN based light emitting devices. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII [900311] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9003). SPIE. https://doi.org/10.1117/12.2044397