Microscopic many-body investigation of the efficiency droop in GaN based light emitting devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Fully microscopic models for the calculation of the carrier dynamics and resulting optical response are used to investigate the validity of various models that have been suggested as the cause for the efficiency droop in GaN-based devices. Models based on internal piezoelectric electric fields, carrier localization, Auger and density-activated defect recombination are analysed. In particular, the models are used to simulate aspects of a recent experiment in which green emitting quantum wells were pumped resonantly and emission from adjacent ultra-violet emitting wells was attributed to carrier redistributions due to Auger processes. It is shown that the UV emission can be explained as a direct result of the optical excitation without involving Auger processes.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume9003
ISBN (Print)9780819499165
DOIs
StatePublished - 2014
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII - San Francisco, CA, United States
Duration: Feb 4 2014Feb 6 2014

Other

OtherLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII
CountryUnited States
CitySan Francisco, CA
Period2/4/142/6/14

Fingerprint

Quantum Well
Redistribution
Recombination
Ultraviolet
Photoexcitation
Electric Field
Adjacent
Defects
Excitation
Model
Model-based
Semiconductor quantum wells
Internal
Electric fields
quantum wells
Experiment
electric fields
causes
defects
excitation

Keywords

  • Auger
  • defect recombination
  • efficiency droop
  • GaN
  • many-body theory
  • nonequilibrium effects

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Hader, J., Moloney, J. V., & Koch, S. W. (2014). Microscopic many-body investigation of the efficiency droop in GaN based light emitting devices. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 9003). [900311] SPIE. https://doi.org/10.1117/12.2044397

Microscopic many-body investigation of the efficiency droop in GaN based light emitting devices. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9003 SPIE, 2014. 900311.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hader, J, Moloney, JV & Koch, SW 2014, Microscopic many-body investigation of the efficiency droop in GaN based light emitting devices. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 9003, 900311, SPIE, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, San Francisco, CA, United States, 2/4/14. https://doi.org/10.1117/12.2044397
Hader J, Moloney JV, Koch SW. Microscopic many-body investigation of the efficiency droop in GaN based light emitting devices. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9003. SPIE. 2014. 900311 https://doi.org/10.1117/12.2044397
Hader, Jorg ; Moloney, Jerome V ; Koch, Stephan W. / Microscopic many-body investigation of the efficiency droop in GaN based light emitting devices. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9003 SPIE, 2014.
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