Microscopic Modeling of Gain and Luminescence in Semiconductor

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

The capabilities of a fully microscopic approach for the calculation of optical material properties of semiconductor lasers are reviewed. Several comparisons between the results of these calculations and measured data are used to demonstrate that the approach yields excellent quantitative agreement with the experiment. It is outlined how this approach allows one to predict the optical properties of devices under high-power operating conditions based only on low-intensity photo luminescence (PL) spectra. Examples for the gain-, absorption-, PL- and linewidth enhancement factor-spectra in single and multiple quantum-well structures, superlattices, Type II quantum wells and quantum dots, and for various material systems are discussed.

Original languageEnglish (US)
Pages (from-to)688-697
Number of pages10
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume9
Issue number3
DOIs
StatePublished - May 2003

Fingerprint

Semiconductor quantum wells
Luminescence
Photoluminescence
quantum wells
luminescence
Semiconductor materials
photoluminescence
Optical materials
Superlattices
optical materials
Linewidth
Semiconductor quantum dots
superlattices
Semiconductor lasers
Materials properties
Optical properties
semiconductor lasers
quantum dots
optical properties
augmentation

Keywords

  • Absorption
  • Gain
  • Gain measurement
  • Modeling
  • Photo luminescence (PL)
  • Quantum-well lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Microscopic Modeling of Gain and Luminescence in Semiconductor. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W; Chow, Weng W.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 9, No. 3, 05.2003, p. 688-697.

Research output: Contribution to journalArticle

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