Microscopic modeling of GaInNAs semiconductor lasers

Jorg Hader, Jerome V Moloney, E. P. O'Reilly, M. R. Hofmann, Stephan W Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We calculate microscopically important material properties for a GaInNAs/GaAs quantum-well laser operating in the 1.3 μm wavelength regime. The results are compared to those for an InGaAsP/InP and an InGaAlAs/InP structure with similar fundamental transition energies. The much higher confinement for carriers in the GaInNAs quantum well is shown to lead to larger material gain and differential gain and lower linewidth enhancement factors than for the later two material systems.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsY. Arakawa, P. Blood, M. Osinski
Pages36-45
Number of pages10
Volume4283
DOIs
StatePublished - 2001
EventPhysics and Simulation of Optoelectronic Devices IX - San Jose, CA, United States
Duration: Jan 22 2001Jan 26 2001

Other

OtherPhysics and Simulation of Optoelectronic Devices IX
CountryUnited States
CitySan Jose, CA
Period1/22/011/26/01

Fingerprint

Semiconductor lasers
semiconductor lasers
Quantum well lasers
quantum well lasers
Linewidth
Semiconductor quantum wells
Materials properties
quantum wells
Wavelength
augmentation
wavelengths
energy

Keywords

  • Absorption
  • Carrier capture time
  • Gain
  • GaInNAs
  • InGaAlAs
  • InGaAsP
  • Linewidth enhancement factor
  • Semiconductor laser

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Hader, J., Moloney, J. V., O'Reilly, E. P., Hofmann, M. R., & Koch, S. W. (2001). Microscopic modeling of GaInNAs semiconductor lasers. In Y. Arakawa, P. Blood, & M. Osinski (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4283, pp. 36-45) https://doi.org/10.1117/12.432581

Microscopic modeling of GaInNAs semiconductor lasers. / Hader, Jorg; Moloney, Jerome V; O'Reilly, E. P.; Hofmann, M. R.; Koch, Stephan W.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Y. Arakawa; P. Blood; M. Osinski. Vol. 4283 2001. p. 36-45.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hader, J, Moloney, JV, O'Reilly, EP, Hofmann, MR & Koch, SW 2001, Microscopic modeling of GaInNAs semiconductor lasers. in Y Arakawa, P Blood & M Osinski (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4283, pp. 36-45, Physics and Simulation of Optoelectronic Devices IX, San Jose, CA, United States, 1/22/01. https://doi.org/10.1117/12.432581
Hader J, Moloney JV, O'Reilly EP, Hofmann MR, Koch SW. Microscopic modeling of GaInNAs semiconductor lasers. In Arakawa Y, Blood P, Osinski M, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4283. 2001. p. 36-45 https://doi.org/10.1117/12.432581
Hader, Jorg ; Moloney, Jerome V ; O'Reilly, E. P. ; Hofmann, M. R. ; Koch, Stephan W. / Microscopic modeling of GaInNAs semiconductor lasers. Proceedings of SPIE - The International Society for Optical Engineering. editor / Y. Arakawa ; P. Blood ; M. Osinski. Vol. 4283 2001. pp. 36-45
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