Microscopic modeling of GaInNAs semiconductor lasers

Jörg Hader, Jerome V. Moloney, Eoin P. O’Reilly, Martin R. Hofmann, Stephan W. Koch

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We calculate microscopically important material properties for a GaInNAs/GaAs quantum-well laser operating in the 1.3 μm wavelength regime. The results are compared to those for an InGaAsP/InP and an InGaAlAs/InP structure with similar fundamental transition energies. The much higher confinement for carriers in the GaInNAs quantum well is shown to lead to larger material gain and differential gain and lower linewidth enhancement factors than for the later two material systems.

Original languageEnglish (US)
Pages (from-to)36-45
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4283
Issue number1
DOIs
StatePublished - Jul 9 2001

Keywords

  • Absorption
  • Carrier capture time
  • Gain
  • GaInNAs
  • InGaAlAs
  • InGaAsP
  • Linewidth enhancement factor
  • Semiconductor laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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