Microscopic modeling of photoluminescence of strongly disordered semiconductors

P. Bozsoki, M. Kira, W. Hoyer, T. Meier, I. Varga, P. Thomas, S. W. Koch

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence of strongly disordered semiconductors. The approach includes both diagonal disorder and the many-body Coulomb interaction. As a case study, the light emission of a correlated plasma is investigated numerically for a one-dimensional two-band tight-binding model. The band structure of the underlying ordered system is assumed to correspond to either a direct or an indirect semiconductor. In particular, luminescence and absorption spectra are computed for various levels of disorder and sample temperature to determine thermodynamic relations, the Stokes shift, and the radiative lifetime distribution.

Original languageEnglish (US)
Pages (from-to)99-112
Number of pages14
JournalJournal of Luminescence
Volume124
Issue number1
DOIs
StatePublished - May 2007

Keywords

  • Disordered semiconductors
  • Lifetime
  • Photoluminescence
  • Stokes shift
  • Theory
  • Thermodynamical relation

ASJC Scopus subject areas

  • Biophysics
  • Atomic and Molecular Physics, and Optics
  • Chemistry(all)
  • Biochemistry
  • Condensed Matter Physics

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