Microscopic modeling of photoluminescence of strongly disordered semiconductors

P. Bozsoki, M. Kira, W. Hoyer, T. Meier, I. Varga, P. Thomas, Stephan W Koch

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence of strongly disordered semiconductors. The approach includes both diagonal disorder and the many-body Coulomb interaction. As a case study, the light emission of a correlated plasma is investigated numerically for a one-dimensional two-band tight-binding model. The band structure of the underlying ordered system is assumed to correspond to either a direct or an indirect semiconductor. In particular, luminescence and absorption spectra are computed for various levels of disorder and sample temperature to determine thermodynamic relations, the Stokes shift, and the radiative lifetime distribution.

Original languageEnglish (US)
Pages (from-to)99-112
Number of pages14
JournalJournal of Luminescence
Volume124
Issue number1
DOIs
StatePublished - May 2007
Externally publishedYes

Fingerprint

Semiconductors
Photoluminescence
Semiconductor materials
Luminescence
photoluminescence
disorders
luminescence
Light emission
radiative lifetime
Coulomb interactions
Thermodynamics
Band structure
light emission
Absorption spectra
absorption spectra
Plasmas
Light
thermodynamics
Temperature
shift

Keywords

  • Disordered semiconductors
  • Lifetime
  • Photoluminescence
  • Stokes shift
  • Theory
  • Thermodynamical relation

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Atomic and Molecular Physics, and Optics

Cite this

Microscopic modeling of photoluminescence of strongly disordered semiconductors. / Bozsoki, P.; Kira, M.; Hoyer, W.; Meier, T.; Varga, I.; Thomas, P.; Koch, Stephan W.

In: Journal of Luminescence, Vol. 124, No. 1, 05.2007, p. 99-112.

Research output: Contribution to journalArticle

Bozsoki, P. ; Kira, M. ; Hoyer, W. ; Meier, T. ; Varga, I. ; Thomas, P. ; Koch, Stephan W. / Microscopic modeling of photoluminescence of strongly disordered semiconductors. In: Journal of Luminescence. 2007 ; Vol. 124, No. 1. pp. 99-112.
@article{9d2a00e57ebf4e279bcec6bcb4a56eb6,
title = "Microscopic modeling of photoluminescence of strongly disordered semiconductors",
abstract = "A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence of strongly disordered semiconductors. The approach includes both diagonal disorder and the many-body Coulomb interaction. As a case study, the light emission of a correlated plasma is investigated numerically for a one-dimensional two-band tight-binding model. The band structure of the underlying ordered system is assumed to correspond to either a direct or an indirect semiconductor. In particular, luminescence and absorption spectra are computed for various levels of disorder and sample temperature to determine thermodynamic relations, the Stokes shift, and the radiative lifetime distribution.",
keywords = "Disordered semiconductors, Lifetime, Photoluminescence, Stokes shift, Theory, Thermodynamical relation",
author = "P. Bozsoki and M. Kira and W. Hoyer and T. Meier and I. Varga and P. Thomas and Koch, {Stephan W}",
year = "2007",
month = "5",
doi = "10.1016/j.jlumin.2006.02.005",
language = "English (US)",
volume = "124",
pages = "99--112",
journal = "Journal of Luminescence",
issn = "0022-2313",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Microscopic modeling of photoluminescence of strongly disordered semiconductors

AU - Bozsoki, P.

AU - Kira, M.

AU - Hoyer, W.

AU - Meier, T.

AU - Varga, I.

AU - Thomas, P.

AU - Koch, Stephan W

PY - 2007/5

Y1 - 2007/5

N2 - A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence of strongly disordered semiconductors. The approach includes both diagonal disorder and the many-body Coulomb interaction. As a case study, the light emission of a correlated plasma is investigated numerically for a one-dimensional two-band tight-binding model. The band structure of the underlying ordered system is assumed to correspond to either a direct or an indirect semiconductor. In particular, luminescence and absorption spectra are computed for various levels of disorder and sample temperature to determine thermodynamic relations, the Stokes shift, and the radiative lifetime distribution.

AB - A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence of strongly disordered semiconductors. The approach includes both diagonal disorder and the many-body Coulomb interaction. As a case study, the light emission of a correlated plasma is investigated numerically for a one-dimensional two-band tight-binding model. The band structure of the underlying ordered system is assumed to correspond to either a direct or an indirect semiconductor. In particular, luminescence and absorption spectra are computed for various levels of disorder and sample temperature to determine thermodynamic relations, the Stokes shift, and the radiative lifetime distribution.

KW - Disordered semiconductors

KW - Lifetime

KW - Photoluminescence

KW - Stokes shift

KW - Theory

KW - Thermodynamical relation

UR - http://www.scopus.com/inward/record.url?scp=33751264615&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751264615&partnerID=8YFLogxK

U2 - 10.1016/j.jlumin.2006.02.005

DO - 10.1016/j.jlumin.2006.02.005

M3 - Article

AN - SCOPUS:33751264615

VL - 124

SP - 99

EP - 112

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

IS - 1

ER -