Microscopic modelling of opto-electronic properties of dilute bismide materials for the mid-IR

Jorg Hader, Jerome V Moloney, O. Rubel, S. C. Badescu, S. Johnson, Stephan W Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Fully microscopic many-body models are used to determine important material characteristics of GaAsBi and InAsBi based devices. Calculations based on the band anti-crossing (BAC) model are compared to first principle density functional theory (DFT) results. Good agreement between BAC-based results and experimental data is found for properties that are dominated by states close to the bandgap, like absorption/gain and photo luminescence. Using the BAC model for properties that involve states in the energetic region of the BAC defect level, like Auger losses and free carrier absorption results in a sharp resonance in the dependence of these quantities for Bismuth concentrations for which the bandgap becomes resonant with the spin-orbit splitting or the BAC-splitting of the light and heavy hole bands. DFT calculations show that the BAC model strongly over-simplifies the influence of the bismuth atoms on the bandstructure. Taking into account the more realistic results of DFT calculations should lead to a reduction of the sharp resonance and lead to enhancements or suppressions for other Bismuth concentrations and spectral regions.

Original languageEnglish (US)
Title of host publicationNovel In-Plane Semiconductor Lasers XV
PublisherSPIE
Volume9767
ISBN (Electronic)9781510600027
DOIs
StatePublished - 2016
EventNovel In-Plane Semiconductor Lasers XV - San Francisco, United States
Duration: Feb 15 2016Feb 18 2016

Other

OtherNovel In-Plane Semiconductor Lasers XV
CountryUnited States
CitySan Francisco
Period2/15/162/18/16

Fingerprint

Mid-infrared
Electronic Properties
Optoelectronics
Electronic properties
Bismuth
Density functional theory
electronics
Modeling
Density Functional
Energy gap
bismuth
density functional theory
Absorption
Photoluminescence
Orbits
Band Structure
Atoms
Defects
First-principles
Model

Keywords

  • Absorption
  • Auger losses
  • Band anti-crossing
  • Bismuth containing materials
  • Density functional theory
  • Many-body theory
  • Mid-IR materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Hader, J., Moloney, J. V., Rubel, O., Badescu, S. C., Johnson, S., & Koch, S. W. (2016). Microscopic modelling of opto-electronic properties of dilute bismide materials for the mid-IR. In Novel In-Plane Semiconductor Lasers XV (Vol. 9767). [976709] SPIE. https://doi.org/10.1117/12.2213310

Microscopic modelling of opto-electronic properties of dilute bismide materials for the mid-IR. / Hader, Jorg; Moloney, Jerome V; Rubel, O.; Badescu, S. C.; Johnson, S.; Koch, Stephan W.

Novel In-Plane Semiconductor Lasers XV. Vol. 9767 SPIE, 2016. 976709.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hader, J, Moloney, JV, Rubel, O, Badescu, SC, Johnson, S & Koch, SW 2016, Microscopic modelling of opto-electronic properties of dilute bismide materials for the mid-IR. in Novel In-Plane Semiconductor Lasers XV. vol. 9767, 976709, SPIE, Novel In-Plane Semiconductor Lasers XV, San Francisco, United States, 2/15/16. https://doi.org/10.1117/12.2213310
Hader J, Moloney JV, Rubel O, Badescu SC, Johnson S, Koch SW. Microscopic modelling of opto-electronic properties of dilute bismide materials for the mid-IR. In Novel In-Plane Semiconductor Lasers XV. Vol. 9767. SPIE. 2016. 976709 https://doi.org/10.1117/12.2213310
Hader, Jorg ; Moloney, Jerome V ; Rubel, O. ; Badescu, S. C. ; Johnson, S. ; Koch, Stephan W. / Microscopic modelling of opto-electronic properties of dilute bismide materials for the mid-IR. Novel In-Plane Semiconductor Lasers XV. Vol. 9767 SPIE, 2016.
@inproceedings{1b73648838dd40529fd773cd03820a36,
title = "Microscopic modelling of opto-electronic properties of dilute bismide materials for the mid-IR",
abstract = "Fully microscopic many-body models are used to determine important material characteristics of GaAsBi and InAsBi based devices. Calculations based on the band anti-crossing (BAC) model are compared to first principle density functional theory (DFT) results. Good agreement between BAC-based results and experimental data is found for properties that are dominated by states close to the bandgap, like absorption/gain and photo luminescence. Using the BAC model for properties that involve states in the energetic region of the BAC defect level, like Auger losses and free carrier absorption results in a sharp resonance in the dependence of these quantities for Bismuth concentrations for which the bandgap becomes resonant with the spin-orbit splitting or the BAC-splitting of the light and heavy hole bands. DFT calculations show that the BAC model strongly over-simplifies the influence of the bismuth atoms on the bandstructure. Taking into account the more realistic results of DFT calculations should lead to a reduction of the sharp resonance and lead to enhancements or suppressions for other Bismuth concentrations and spectral regions.",
keywords = "Absorption, Auger losses, Band anti-crossing, Bismuth containing materials, Density functional theory, Many-body theory, Mid-IR materials",
author = "Jorg Hader and Moloney, {Jerome V} and O. Rubel and Badescu, {S. C.} and S. Johnson and Koch, {Stephan W}",
year = "2016",
doi = "10.1117/12.2213310",
language = "English (US)",
volume = "9767",
booktitle = "Novel In-Plane Semiconductor Lasers XV",
publisher = "SPIE",
address = "United States",

}

TY - GEN

T1 - Microscopic modelling of opto-electronic properties of dilute bismide materials for the mid-IR

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Rubel, O.

AU - Badescu, S. C.

AU - Johnson, S.

AU - Koch, Stephan W

PY - 2016

Y1 - 2016

N2 - Fully microscopic many-body models are used to determine important material characteristics of GaAsBi and InAsBi based devices. Calculations based on the band anti-crossing (BAC) model are compared to first principle density functional theory (DFT) results. Good agreement between BAC-based results and experimental data is found for properties that are dominated by states close to the bandgap, like absorption/gain and photo luminescence. Using the BAC model for properties that involve states in the energetic region of the BAC defect level, like Auger losses and free carrier absorption results in a sharp resonance in the dependence of these quantities for Bismuth concentrations for which the bandgap becomes resonant with the spin-orbit splitting or the BAC-splitting of the light and heavy hole bands. DFT calculations show that the BAC model strongly over-simplifies the influence of the bismuth atoms on the bandstructure. Taking into account the more realistic results of DFT calculations should lead to a reduction of the sharp resonance and lead to enhancements or suppressions for other Bismuth concentrations and spectral regions.

AB - Fully microscopic many-body models are used to determine important material characteristics of GaAsBi and InAsBi based devices. Calculations based on the band anti-crossing (BAC) model are compared to first principle density functional theory (DFT) results. Good agreement between BAC-based results and experimental data is found for properties that are dominated by states close to the bandgap, like absorption/gain and photo luminescence. Using the BAC model for properties that involve states in the energetic region of the BAC defect level, like Auger losses and free carrier absorption results in a sharp resonance in the dependence of these quantities for Bismuth concentrations for which the bandgap becomes resonant with the spin-orbit splitting or the BAC-splitting of the light and heavy hole bands. DFT calculations show that the BAC model strongly over-simplifies the influence of the bismuth atoms on the bandstructure. Taking into account the more realistic results of DFT calculations should lead to a reduction of the sharp resonance and lead to enhancements or suppressions for other Bismuth concentrations and spectral regions.

KW - Absorption

KW - Auger losses

KW - Band anti-crossing

KW - Bismuth containing materials

KW - Density functional theory

KW - Many-body theory

KW - Mid-IR materials

UR - http://www.scopus.com/inward/record.url?scp=84978525649&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84978525649&partnerID=8YFLogxK

U2 - 10.1117/12.2213310

DO - 10.1117/12.2213310

M3 - Conference contribution

AN - SCOPUS:84978525649

VL - 9767

BT - Novel In-Plane Semiconductor Lasers XV

PB - SPIE

ER -