Microscopic prediction of optical and electronic material properties in GaInNAs semiconductor lasers

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Abstract

A fit-parameter-free model is used to calculate optical and electronic material properties of GaInNAs semiconductor lasers. Incoherent processes which lead to dephasing of optical polarisations and carrier thermalisation are calculated microscopically by solving generalised quantum Boltzmann equations for electron-electron and electron-phonon scattering. The theory is shown to give excellent quantitative agreement with experimental results. Shortcomings of simpler approaches are demonstrated. Carrier capture times in GaInNAs systems of varying well depth and width are calculated and the results are compared to those in InGaPAs- and AlInGaAs-based structures.

Original languageEnglish (US)
Pages (from-to)22-24
Number of pages3
JournalIEE Proceedings: Optoelectronics
Volume150
Issue number1
DOIs
StatePublished - Feb 2003

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optical materials
Semiconductor lasers
Materials properties
semiconductor lasers
Phonon scattering
Electron scattering
Electrons
Boltzmann equation
Light polarization
predictions
electronics
electrons
optical polarization
scattering

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

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title = "Microscopic prediction of optical and electronic material properties in GaInNAs semiconductor lasers",
abstract = "A fit-parameter-free model is used to calculate optical and electronic material properties of GaInNAs semiconductor lasers. Incoherent processes which lead to dephasing of optical polarisations and carrier thermalisation are calculated microscopically by solving generalised quantum Boltzmann equations for electron-electron and electron-phonon scattering. The theory is shown to give excellent quantitative agreement with experimental results. Shortcomings of simpler approaches are demonstrated. Carrier capture times in GaInNAs systems of varying well depth and width are calculated and the results are compared to those in InGaPAs- and AlInGaAs-based structures.",
author = "Jorg Hader and Moloney, {Jerome V} and Koch, {Stephan W}",
year = "2003",
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T1 - Microscopic prediction of optical and electronic material properties in GaInNAs semiconductor lasers

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Koch, Stephan W

PY - 2003/2

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N2 - A fit-parameter-free model is used to calculate optical and electronic material properties of GaInNAs semiconductor lasers. Incoherent processes which lead to dephasing of optical polarisations and carrier thermalisation are calculated microscopically by solving generalised quantum Boltzmann equations for electron-electron and electron-phonon scattering. The theory is shown to give excellent quantitative agreement with experimental results. Shortcomings of simpler approaches are demonstrated. Carrier capture times in GaInNAs systems of varying well depth and width are calculated and the results are compared to those in InGaPAs- and AlInGaAs-based structures.

AB - A fit-parameter-free model is used to calculate optical and electronic material properties of GaInNAs semiconductor lasers. Incoherent processes which lead to dephasing of optical polarisations and carrier thermalisation are calculated microscopically by solving generalised quantum Boltzmann equations for electron-electron and electron-phonon scattering. The theory is shown to give excellent quantitative agreement with experimental results. Shortcomings of simpler approaches are demonstrated. Carrier capture times in GaInNAs systems of varying well depth and width are calculated and the results are compared to those in InGaPAs- and AlInGaAs-based structures.

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JF - IEE Proceedings: Optoelectronics

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