Microscopic simulation of semiconductor lasers at telecommunication wavelengths

A. Thränhardt, C. Bückers, C. Schlichenmaier, I. Kuznetsova, S. W. Koch, J. Hader, J. V. Moloney

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We consider two GaAs-based laser materials emitting at telecommunication wavelengths, namely the dilute nitride (GaIn)(NAs) as well as Ga(AsSb), and model their optical properties by including scattering and dephasing on a microscopic basis. The theory shows an excellent agreement with experiment without the inclusion of fit parameters such as phenomenological scattering times. By careful comparison of measurements and computations, one can extract controversial bandstructure parameters such as the band offset.

Original languageEnglish (US)
Pages (from-to)1005-1009
Number of pages5
JournalOptical and Quantum Electronics
Volume38
Issue number12-14
DOIs
StatePublished - Sep 2006

Keywords

  • Carrier scattering
  • Dilute nitrides
  • GaAsSb
  • Microscopic gain calculation
  • Quantum well lasers
  • Telecommunication wavelength

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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