Microscopic simulation of semiconductor lasers in the GaInNAs material system

A. Thränhardt, C. Schlichenmaier, I. Kuznetsova, S. W. Koch, W. W. Chow, J. Hader, J. V. Moloney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

(GaIn)(NAs) lasers of different material compositions are considered with respect to their gain properties and radiative and Auger losses. Scattering and dephasing processes are included on a microscopic basis. The theory shows good agreement to experiment. Optical properties for a 1.55 μm structure are investigated and show no principal degradation as compared to a 1.3 μm structure.

Original languageEnglish (US)
Title of host publication2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Pages3-4
Number of pages2
DOIs
StatePublished - Dec 1 2006
Event2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 - Nanyang, Singapore
Duration: Sep 11 2006Sep 14 2006

Publication series

Name2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06

Other

Other2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
CountrySingapore
CityNanyang
Period9/11/069/14/06

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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